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PDF TPC8123 Data sheet ( Hoja de datos )
| Número de pieza | TPC8123 | |
| Descripción | Field Effect Transistor Silicon P Channel MOS Type | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TPC8123
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOwwSwⅥ.D)ataSheet4U.com
TPC8123
Lithium Ion Battery Applications
Power Management Switch Applications
Unit: mm
• Small footprint due to small and thin package
• Low drain-source ON-resistance: RDS (ON) = 7.0 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 36 S (typ.)
• Low leakage current: IDSS = −10 μA (max) (VDS = −30 V)
• Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −0.5 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (t = 10 s)
(Note 2a)
Drain power dissipation (t = 10 s)
(Note 2b)
Single pulse avalanche energy
(Note 3)
Avalanche current
(Note 1)
Repetitive avalanche energy
(Note 2a) (Note 4)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
PD
EAS
IAR
EAR
Tch
Tstg
−30
−30
−25/+20
−11
−44
1.9
1.0
79
−11
0.04
150
−55 to 150
Note 1, Note 2, Note 3 and Note 4: See the next page.
Unit
V
V
V
A
W
W
mJ
A
mJ
°C
°C
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-6J1B
Weight: 0.080 g (typ.)
Circuit Configuration
8765
Using continuously under heavy loads (e.g. the application of high
1234
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated
failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
1 2009-07-27
1 page  
RDS (ON) – Ta
20
Common source
Pulse test
16
ID = −2.8, −5.5, −11 A
12
8 VGS = −4.5 V
4 VGS = −10 V
ID = −2.8, −5.5, −11 A
0
−80 −40
0
40 80 120 160
Ambient temperature Ta (°C)
TPC8123
www.DataSheet4U.com
−100
−10
−10
IDR – VDS
−4.5
−3
−1
−0.1
0
−1 VGS = 0 V
Common source
Ta = 25°C
Pulse test
0.2 0.4 0.6 0.8 1 1.2
Drain−source voltage VDS (V)
10000
Capacitance – VDS
1000
Ciss
Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
100
−0.1
−1
Coss
Crss
−10 −100
Drain−source voltage VDS (V)
Vth – Ta
−2
−1.6
−1.2
−0.8
−0.4
Common source
VDS = −10 V
ID = −0.5mA
Pulse test
0
−80 −40
0
40 80 120
Ambient temperature Ta (°C)
160
2
(1)
1.6
1.2
(2)
0.8
PD – Ta
(1)Device mounted on a glass-epoxy
board(a) (Note 2a)
(2)Device mounted on a glass-epoxy
board(b) (Note 2b)
t = 10 s
0.4
0
0 40 80 120 160
Ambient temperature Ta (°C)
5
Dynamic input/output
characteristics
−30
−25 VDD = −24 V
Common source −30
ID = −11 A
Ta = 25°C
Pulse test
−25
−20
−15
−12
−10
−6
−5
VDS
−20
−6
VDD = −24 V
−12
VGS
−15
−10
−5
00
0 20 40 60 80 100
Total gate charge Qg (nC)
2009-07-27
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet TPC8123.PDF ] | |
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