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PDF MSAGX75F60A Data sheet ( Hoja de datos )
| Número de pieza | MSAGX75F60A | |
| Descripción | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | Microsemi Corporation | |
| Logotipo |  |
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MSAGX75F60A
Features
• Rugged polysilicon gate cell structure
• high current handling capability, latch-proof
• Hermetically sealed, surface mount power package
• Low package inductance
• Very low thermal resistance
• Reverse polarity available upon request: MSAGX75F60B
• high frequency IGBT, low switching losses
600 Volts
75 Amps
2.7 Volts vce(sat)
N-CHANNEL
INSULATED GATE
BIPOLAR TRANSISTOR
Maximum Ratings @ 25°C (unless otherwise specified)
DESCRIPTION
SYMBOL
Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter)
@ TJ ≥ 25°C
Collector-to-Gate Breakdown Voltage @ TJ ≥ 25°C, RGS= 1 MΩ
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Continuous Collector Current
90°C
Tj= 25°C
Tj=
Peak Collector Current, pulse width limited by Tjmax,
Safe Operating Area (RBSOA) @ VGE= 15V, L= 30µH (clamped inductive
load), RG= 2.7Ω, Tj= 125°C, VCE= 0.8 x VCES
Power Dissipation
Junction Temperature Range
Storage Temperature Range
Thermal Resistance, Junction to Case
BVCES
BVCGR
VGES
VGEM
IC25
IC90
ICM
Imax
PD
Tj
Tstg
θJC
Mechanical Outline
MAX.
600
600
+/-20
+/-30
75
50
200
100
300
-55 to +150
-55 to +150
0.25
UNIT
Volts
Volts
Volts
Volts
Amps
Amps
Amps
Watts
°C
°C
°C/W
COLLECTOR
EMITTER
GATE
Datasheet# MSC0272B
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MSAGX75F60A.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MSAGX75F60A | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR | Microsemi Corporation |
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