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SavantIC |
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BUV27
DESCRIPTION
www.dat·aWshiethet4TuO.co-2m20C package
·Low collector saturation voltage
·Fast switching speed
APPLICATIONS
·For use in high frequency and efficiency
converters,switching regulators and motor
control
PINNING
PIN
DESCRIPTION
1 Base
2
Collector;connected to
mounting base
3 Emitter
Absolute maximum ratings (Tc=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
IC
Emitter-base voltage
Collector current (DC)
ICM Collector current (peak)
IB Base current
IBM Base current (peak)
Ptot Total power dissipation
Tj Max.operating junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-case Thermal resistance junction case
VALUE
240
120
7
12
20
4
6
85
175
-65~175
UNIT
V
V
V
A
A
A
A
W
MAX
1.76
UNIT
/W
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BUV27
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2 A ;IB=0;L=25mH
V(BR)EBO Emitter-base breakdown voltage
IE=50mA; IC=0
VCEsat-1 Collector-emitter saturation voltage IC=4A ;IB=0.4 A
VCEsat-2 Collector-emitter saturation voltage IC=8A; IB=0.8A
VBEsat
Base-emitter saturation voltage
ICEX Collector cut-off current
IEBO Emitter cut-off current
IC=8A; IB=0.8A
VCE =240V;VBE = -1.5 V
TC=125
VEB=5V; IC=0
Switching times resistive load
ton Turn-on time
ts Storage time
tf Fall time
IC=8A;IB1=0.8A;VCC=90V
VBE = - 6V;RBB = 3.75D
MIN TYP. MAX UNIT
120 V
7 30 V
0.7 V
1.5 V
2V
1 mA
1 mA
0.4 0.8 ms
0.5 1.2 µs
0.12 0.25 µs
2
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