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IFN6449 반도체 회로 부품 판매점

(IFN6449 / IFN6450) N-Channel Silicon Junction Field-Effect Transistor



InterFET Corporation 로고
InterFET Corporation
IFN6449 데이터시트, 핀배열, 회로
B-48
IFN6449, IFN6450
N-Channel Silicon Junction Field-Effect Transistor
www.DataSheet4U.com
01/99
¥ High Voltage
Absolute maximum ratings at TA = 25¡C
IFN6449 IFN6450
Reverse Gate Source Voltage
– 100 V – 100 V
Reverse Gate Drain Voltage
– 300 V – 200 V
Continuous Forward Gate Current
10 mA 10 mA
Continuous Device Power Dissipation
800 mW 800 mW
Power Derating
6.4 mW/°C 6.4 mW/°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Drain Breakdown Voltage
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
Dynamic Electrical Characteristics
Common Source Forward
Transfer Transmittance
Common Source Output Conductance
Common Source Input Capacitance
Common Source
Reverse Transfer Capacitance
IFN6449 IFN6450
Min Max Min Max Unit
V(BR)GDO
V(BR)GSO
IGSS
VGS(OFF)
IDSS
– 300
– 200
– 100
– 100
– 100
– 100
– 2 – 15 – 2 – 15
2 10 2 10
V
V
nA
µA
V
mA
| Yfs |
gos
Ciss
Crss
0.5 3 0.5 3 mS
100 100 µS
10 10 pF
5 5 pF
Process NJ42
Test Conditions
IG = – 10 µA, IS = ØA
IG = – 10 µA, ID = ØA
VGS = – 80V, VDS = ØV
VGS = – 80V, VDS = ØV
VDS = 30V, ID = 4 nA
VDS = 30V, VGS = ØV
TA = 150°C
VDS = 30V, VGS = ØV
VDS = 30V, VGS = ØV
VDS = 30V, VGS = ØV
VDS = 30V, VGS = ØV
f = 1 kHz
f = 1 kHz
f = 1 MHz
f = 1 MHz
TOÐ39 Package
Dimensions in Inches (mm)
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
Pin Configuration
1 Source, 2 Drain, 3 Gate & Case
www.interfet.com




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IFN6449 transistor

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(IFN6449 / IFN6450) N-Channel Silicon Junction Field-Effect Transistor - InterFET Corporation