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Número de pieza | AOU404 | |
Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
Fabricantes | Alpha & Omega Semiconductors | |
Logotipo | ||
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AOU404
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOU404 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications. Standard
Product AOU404 is Pb-free (meets ROHS & Sony
259 specifications). AOU404L is a Green Product
ordering option. AOU404 and AOU404L are
electrically identical.
TO-251
Features
VDS (V) = 75V
ID = 10 A (VGS = 20V)
RDS(ON) < 130 mΩ (VGS = 20V) @ 5A
RDS(ON) < 140 mΩ (VGS = 10V)
RDS(ON) < 165 mΩ (VGS = 4.5V)
D
Top View
Drain Connected
to Tab
G DS
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
ID
IDM
IAR
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
75
±25
10
10
20
10
15
20
10
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Case B
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
115
4.5
Max
140
7.5
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
1 page AOU404
TwYwPwI.CDAatLaSEhLeEetC4UT.RcoICmAL AND THERMAL CHARACTERISTICS
12
10
tA
=
L ⋅ ID
BV − VDD
8
6
4
TA=25°C
2
0
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
25
20
15
10
5
0
0
25 50 75 100 125 150
TCASE (°C)
Figure 13: Power De-rating (Note B)
175
12
10
8
6
4
2
0
0
25 50 75 100 125 150
TCASE (°C)
Figure 14: Current De-rating (Note B)
175
Alpha & Omega Semiconductor, Ltd.
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet AOU404.PDF ] |
Número de pieza | Descripción | Fabricantes |
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