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SavantIC |
SavantIC Semiconductor
wSwiwl.iDcatoaSnheeNt4PU.cNomPower Transistors
Product Specification
2N5466 2N5467
DESCRIPTION
·With TO-3 package
·High-voltage capability
·Fast switching speeds
·Low collector saturation voltage
APPLICATIONS
·They are intended for use in off-line power
supplies ,inverter and converter circuits
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
2N5466
2N5467
VCEO
VEBO
Collector-emitter voltage
Emitter-base voltage
IC Collector current
ICM Collector current-peak
IB Base current
PD Total Power Dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
500
700
400
7
3
5
1
140
150
-65~200
UNIT
V
V
V
A
A
A
W
VALUE
1.48
UNIT
/W
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
Product Specification
2N5466 2N5467
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;IB=0
VCEsat Collector-emitter saturation voltage IC=2A; IB=0.4A
VBEsat Base-emitter saturation voltage
IC=2A; IB=0.4A
ICBO Collector cut-off current
ICEV Collector cut-off current
IEBO Emitter cut-off current
VCB=ratedVCBO; IE=0
VCE=ratedVCEO;VBE(off)=1.5V
TC=125
VEB=5V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=4V
hFE-2
DC current gain
IC=2A ; VCE=4V
fT Trainsistion frequency
IC=1A ; VCE=10V;f=1MHz
MIN TYP. MAX UNIT
400 V
2.0 V
2.0 V
1.0 mA
1.0
5.0
mA
1.0 mA
15 45
8
2.5 MHz
2
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