|
Renesas |
2SC1213, 2SC1213A
Silicon NPN Epitaxial
Application
• Low frequency amplifier
www.DataSheet4U.com
• Complementary pair with 2SA673 and 2SA673A
Outline
TO-92 (1)
3
2
1
1. Emitter
2. Collector
3. Base
2SC1213, 2SC1213A
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
2SC1213
35
35
4
500
400
150
–55 to +150
2SC1213A
50
50
4
500
400
150
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
www.DataSheet4U.com
Electrical Characteristics (Ta = 25°C)
2SC1213
2SC1213A
Item
Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage
V(BR)CBO 35
—
—
50
—
—V
IC = 10 µA, IE = 0
Collector to emitter
breakdown voltage
V(BR)CEO 35
—
—
50
—
—V
IC = 1 mA, RBE = ∞
Emitter to base
breakdown voltage
V(BR)EBO
4
— —4
— —V
IE = 10 µA, IC = 0
Collector cutoff current ICBO
DC current tarnsfer ratio hFE*1
hFE
— — 0.5 — — 0.5 µA
60 — 320 60 — 320
10 — — 10 — —
Collector to emitter
saturation voltage
VCE(sat) — 0.2 0.6 —
0.2 0.6
Base to emitter voltage VBE
— 0.64 — — 0.64 —
Notes: 1. The 2SC1213 and 2SC1213A are grouped by hFE as follows.
2. Pulse test
B CD
V
V
VCB = 20 V, IE = 0
VCE = 3 V, IC =10 mA
VCE = 3 V,
IC = 500 mA*2
IC = 150 mA,
IB = 15 mA*2
VCE = 3 V, IC = 10 mA
60 to 120 100 to 200 160 to 320
2
|