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Número de pieza | STW8NC90Z | |
Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | |
Fabricantes | STMicroelectronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de STW8NC90Z (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! STW8NC90Z
N-CHANNEL 900V - 1.1 Ω - 7.6A TO-247
Zener-Protected PowerMESH™III MOSFET
TYPE
VDSS
RDS(on)
ID
STW8NC90Z
900 V < 1.38 Ω 7.6 A
www.DataSheet4Us.coTmYPICAL RDS(on) = 1.1 Ω
s EXTREMELY HIGH dv/dt CAPABILITY GATE-
TO-SOURCE ZENER DIODES
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
The third generation of MESH OVERLAY™ Power
MOSFETs for very high voltage exhibits unsur-
passed on-resistance per unit area while integrating
back-to-back Zener diodes between gate and
source. Such arrangement gives extra ESD capabil-
ity with higher ruggedness performance as request-
ed by a large variety of single-switch applications.
APPLICATIONS
s SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
s WELDING EQUIPMENT
TO-247
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
IGS Gate-source Current (*)
VESD(G-S) Gate source ESD(HBM-C=100pF, R=15KΩ)
dv/dt (1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
(1)ISD ≤7.6A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(*)Limited only by maximum temperature allowed
July 2000
Value
900
900
±25
7.6
4.8
30
190
1.51
±50
4
3
–65 to 150
150
Unit
V
V
V
A
A
A
W
W/°C
mA
KV
V/ns
°C
°C
1/8
1 page Gate Charge vs Gate-source Voltage
Capacitance Variations
STW8NC90Z
www.DataSheet4U.com
Normalized Gate Threshold Voltage vs Temp.
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/8
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet STW8NC90Z.PDF ] |
Número de pieza | Descripción | Fabricantes |
STW8NC90Z | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | STMicroelectronics |
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