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PDF MRF281ZR1 Data sheet ( Hoja de datos )
| Número de pieza | MRF281ZR1 | |
| Descripción | RF POWER FIELD EFFECT TRANSISTORS | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MOTOROLA
www.DatSaSEhMeeIt4CUO.coNmDUCTOR TECHNICAL DATA
The RF Sub–Micron MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for digital and analog cellular PCN and PCS base station
applications with frequencies from 1000 to 2500 MHz. Characterized for
operation Class A and Class AB at 26 volts in commercial and industrial
applications.
• Specified Two–Tone Performance @ 1930 and 2000 MHz, 26 Volts
Output Power — 4 Watts PEP
Power Gain — 11 dB
Efficiency — 30%
Intermodulation Distortion — –29 dBc
• Capable of Handling 10:1 VSWR, @ 26 Vdc,
2000 MHz, 4 Watts CW Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• S–Parameter Characterization at High Bias Levels
• Available in Tape and Reel. R1 Suffix = 500 Units per
12 mm, 7 inch Reel.
Order this document
by MRF281/D
MRF281SR1
MRF281ZR1
2000 MHz, 4 W, 26 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 458B–03, STYLE 1
(NI–200S)
(MRF281SR1)
CASE 458C–03, STYLE 1
(NI–200Z)
(MRF281ZR1)
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 10 µAdc)
Zero Gate Voltage Drain Current
(VDS = 28 Vdc, VGS = 0)
Gate–Source Leakage Current
(VGS = 20 Vdc, VDS = 0)
V(BR)DSS
IDSS
IGSS
Symbol
VDSS
VGS
PD
Tstg
TJ
Symbol
RθJC
Min
65
—
—
Value
65
±20
20
0.115
–65 to +150
200
Max
5.74
Typ Max
74 —
— 10
—1
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
Unit
°C/W
Unit
Vdc
µAdc
µAdc
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 3
MMoOtoTroOla,RInOc.L2A00R2 F DEVICE DATA
MRF281SR1 MRF281ZR1
1
1 page  
www.DataSheet4U.com
NOTES
MOTOROLA RF DEVICE DATA
MRF281SR1 MRF281ZR1
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MRF281ZR1.PDF ] | |
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