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PDF MPSA42M Data sheet ( Hoja de datos )
| Número de pieza | MPSA42M | |
| Descripción | TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR | |
| Fabricantes | Dc Components | |
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DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
MPSA42M
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use as a video output to drive color
CRT, or as a dialer circuit in electronic telephone.
TO-92
Pinning
1 = Emitter
2 = Base
3 = Collector
Absolute Maximum Ratings(TA=25oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
TJ
TSTG
Rating
300
300
6
800
625
+150
-55 to +150
Unit
V
V
V
mA
mW
oC
oC
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
.500
(12.70) Min
2o Typ
2o Typ
.050
(1.27)Typ
.022(0.56)
.014(0.36)
.100
(2.54)
Typ
.022(0.56)
.014(0.36)
321
.148(3.76)
.132(3.36)
.050
5oTyp. 5oTyp. (1.27)Typ
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Collector-Base Breakdown Volatge
BVCBO 300
Collector-Emitter Breakdown Voltage BVCEO 300
Emitter-Base Breakdown Volatge
BVEBO
6
Emitter Cutoff Current
IEBO
-
Collector-Emitter Saturation Voltage(1) VCE(sat)1
VCE(sat)2
-
-
Base-Emitter Saturation Voltage(1)
VBE(sat)1
VBE(sat)2
-
-
DC Current Gain(1)
hFE1
hFE2
80
80
hFE3
40
Transition Frequency
fT 50
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Typ Max
--
--
--
- 0.1
- 0.2
- 0.75
- 0.9
-1
--
--
--
--
Unit
V
V
V
µA
V
V
V
V
-
-
-
MHz
Test Conditions
IC=100µA, IE=0
IC=1mA, IB=0
IE=10µA, IC=0
VEB=3V, IC=0
IC=20mA, IB=2mA
IC=100mA, IB=10mA
IC=20mA, IB=2mA
IC=100mA, IB=10mA
IC=10mA, VCE=10V
IC=100mA, VCE=10V
IC=200mA, VCE=10V
IC=10mA, VCE=20V, f=100MHz
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet MPSA42M.PDF ] | |
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