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PDF MID112 Data sheet ( Hoja de datos )
| Número de pieza | MID112 | |
| Descripción | TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR | |
| Fabricantes | Dc Components | |
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DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
MID112
TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR
Description
Designed for general purpose power and switching
such as output or driver stages in applications such
as switching regulators, converters, and amplifiers.
Pinning
1 = Base
2 = Collector
3 = Emitter
Absolute Maximum Ratings(TA=25oC)
Characteristic
Symbol Rating
Collector-Base Voltage
VCBO
100
Collector-Emitter Voltage
VCEO
100
Emitter-Base Voltage
VEBO
5
Collector Current
Total Power Dissipation(TC=25oC)
IC
PD
2
20
Junction Temperature
TJ +150
Storage Temperature
TSTG -55 to +150
Unit
V
V
V
A
W
oC
oC
TO-251
.268(6.80)
.252(6.40)
.217(5.50)
.205(5.20)
.022(0.55)
.018(0.45)
.284(7.20)
.268(6.80)
2
.063(1.60)
.055(1.40)
123
.035 Max
(0.90)
.256
(6.50)
Min
.032
(0.80)
Max
.181 Typ
(4.60)
.059(1.50)
.035(0.90)
.024(0.60)
.018(0.45)
.095(2.40)
.087(2.20)
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min Typ Max Unit
Test Conditions
Collector-Base Breakdown Voltage
BVCBO 100
-
- V IC=1mA
Collector-Emitter Breakdown Voltage
BVCEO 100
-
-
V IC=30mA
Collector Cutoff Current
ICBO
ICEO
-
-
- 10 µA VCB=80V
- 20 µA VCE=50V
Emitter Cutoff Current
Collector-Emitter Saturation Voltage(1)
Base-Emitter On Voltage(1)
IEBO
VCE(sat)
VBE(on)
-
-
-
- 2 mA VBE=5V
- 2.5 V IC=2A, IB=8mA
- 2.8 V IC=2A, VCE=3V
DC Current Gain(1)
hFE1 500
-
-
- IC=0.5A, VCE=3V
hFE2
1K
- 12K
- IC=2A, VCE=3V
hFE3 200
-
-
- IC=4A, VCE=3V
Output Capacitance
Cob -
- 100 pF VCB=10V
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet MID112.PDF ] | |
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