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PDF DXT2222A Data sheet ( Hoja de datos )
| Número de pieza | DXT2222A | |
| Descripción | TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR | |
| Fabricantes | Dc Components | |
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DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
DXT2222A
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for general purpose amplifier and high
-speed, medium-power switching applications.
Pinning
1 = Base
2 = Collector
3 = Emitter
Absolute Maximum Ratings(TA=25oC)
Characteristic
Symbol Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
VCBO
VCES
VEBO
IC
PD
TJ
TSTG
75
40
6
600
1.2
+150
-55 to +150
Unit
V
V
V
mA
W
oC
oC
.066(1.70)
.059(1.50)
SOT-89
.063(1.60)
.055(1.40)
.167(4.25)
.159(4.05)
.102(2.60)
.095(2.40)
123
.020(0.51)
.014(0.36)
.060(1.52)
.058(1.48)
.120(3.04)
.117(2.96)
.181(4.60)
.173(4.40)
.016(0.41)
.014(0.35)
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min Typ Max
Collector-Base Breakdown Volatge
BVCBO 75
-
-
Collector-Emitter Breakdown Voltage
BVCEO 40
-
-
Emitter-Base Breakdown Volatge
BVEBO
6
-
-
Collector Cutoff Current
ICBO
ICEX
-
-
- 10
- 10
Emitter Cutoff Current
IEBO
-
- 50
Collector-Emitter Saturation Voltage(1)
VCE(sat)1
VCE(sat)2
-
-
- 0.3
-1
Base-Emitter Saturation Voltage(1)
VBE(sat)1
VBE(sat)2
-
-
- 1.2
-2
hFE1
35
-
-
hFE2
50
-
-
DC Current Gain(1)
hFE3
75
-
-
hFE4 100 - 300
hFE5
40
-
-
hFE6
50
-
-
Transition Frequency
fT 300 -
-
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Unit
V
V
V
nA
nA
nA
V
V
V
V
-
-
-
-
-
-
MHz
Test Conditions
IC=10µA
IC=10mA
IE=10µA
VCB=60V
VCB=60V, VEB(off)=3V
VEB=3V
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=100µA, VCE=10V
IC=1mA, VCE=10V
IC=10mA, VCE=10V
IC=150mA, VCE=10V
IC=500mA, VCE=10V
IC=150mA, VCE=1V
VCE=20V, f=100MHz, IC=20mA
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