|
|
PDF MUN5133DW1T1 Data sheet ( Hoja de datos )
| Número de pieza | MUN5133DW1T1 | |
| Descripción | (MUN5111DW1T1 Series) Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors | |
| Fabricantes | ETL | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de MUN5133DW1T1 (archivo pdf) en la parte inferior de esta página. Total 11 Páginas | ||
|
No Preview Available !
Dual Bias Resistor Transistors
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a base–emitter resistor. These
digital transistors are designed to replace a single device and its external resistor bias network.
The BRT eliminates these individual components by integrating them into a single device. In
the MUN5111DW1T1 series, two BRT devices are housed in the SOT–363 package which
is ideal for low–power surface mount applications where board space is at a premium.
. Simplifies Circuit Design
. Reduces Board Space
. Reduces Component Count
. Available in 8 mm, 7 inch/3000 Unit Tape and Reel
MUN5111DW1T1
Series
6
5
4
1
2
3
SOT-363
CASE 419B STYLE1
MAXIMUM RATINGS (T A = 25°C unless otherwise noted, common for Q 1 and Q 2 )
Rating
Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
THERMAL CHARACTERISTICS
V CBO
–50
V CEO
–50
www.DataSheet4U.com
I C –100
Vdc
Vdc
mAdc
Characteristic
(One Junction Heated)
Symbol
Max
Unit
Total Device Dissipation
T A = 25°C
Derate above 25°C
P D 187 (Note 1.) mW
256 (Note 2.)
1.5 (Note 1.) mW/°C
2.0 (Note 2.)
Thermal Resistance –
Junction-to-Ambient
R θJA
670 (Note 1.)
490 (Note 2.)
°C/W
Characteristic
(Both Junctions Heated)
Symbol
Max
Total Device Dissipation
T A = 25°C
Derate above 25°C
P D 250 (Note 1.)
385 (Note 2.)
2.0 (Note 1.)
3.0 (Note 2.)
Thermal Resistance –
Junction-to-Ambient
Thermal Resistance –
Junction-to-Lead
R θJA
R θJL
493 (Note 1.)
325 (Note 2.)
188 (Note 1.)
208 (Note 2.)
Junction and Storage
Temperature
T J , T stg
–55 to +150
1. FR–4 @ Minimum Pad 2. FR–4 @ 1.0 x 1.0 inch Pad
Unit
mW
mW/°C
°C/W
°C/W
°C
6 54
Q2 R1 R2
R2
R1
Q1
12
3
MARKING DIAGRAM
6 54
XX
1 23
xx = Device Marking
= (See Page 2)
DEVICE MARKING
INFORMATION
See specific marking information in
the device marking table on page 2 of
this data sheet.
MUN5111dw–1/11
1 page  
MUN5111DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS – MUN5111DW1T1
1 1000
0.1 100
0.01
0
4
20 40
I C , COLLECTOR CURRENT (mA)
Figure 2. V CE(sat) versus I C
10
50 1
100
10
I C , COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
100
10
3
1
2
0.1
1
0.01
0
0 10 20 30 40
V R , REVERSE BIAS VOLTAGE (VOLTS)
Figure 4. Output Capacitance
100
50
0.001
0
12
34
56
78
9 10
V in , INPUT VOLTAGE (VOLTS)
Figure 5. Output Current versus Input Voltage
10
1
0.1
0
10 20 30 40 50
I C , COLLECTOR CURRENT (mA)
Figure 6. Input Voltage versus Output Current
MUN5111dw–5/11
5 Page 
MUN5111DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS – MUN5137DW1T1
1 1000
0.1 100
0.01
0
5 10 15 20 25 30 35 40 45 50
I C , COLLECTOR CURRENT (mA)
Figure 29. Maximum Collector Voltage versus
Collector Current
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
10 20
30 40 50
V R , REVERSE BIAS VOLTAGE (VOLTS)
Figure 31. Output Capacitance
60
10
1
100
10
I C , COLLECTOR CURRENT (mA)
Figure 30. DC Current Gain
100
10
1
0.1
0.01
0.001
0
1 2 3 4 5 6 7 8 9 10 11
V in , INPUT VOLTAGE (VOLTS)
Figure 32. Output Current versus Input oltage
100
10
1
05
10 15 20 25
I C , COLLECTOR CURRENT (mA)
Figure 33. Input Voltage versus Output Current
MUN5111dw–11/11
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet MUN5133DW1T1.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MUN5133DW1T1 | (MUN5111DW1T1 Series) Dual Bias Resistor Transistors |  Motorola Semiconductors |
| MUN5133DW1T1 | (MUN5111DW1T1 Series) Dual Bias Resistor Transistors |  LRC |
| MUN5133DW1T1 | (MUN5111DW1T1 Series) Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors | ETL |
| MUN5133DW1T1 | (MUN5111DW1T1 Series) Dual Bias Resistor Transistors |  ON Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |