MRF904 반도체 회로 부품 판매점
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
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 Microsemi Corporation |
www.DataSheet4U.com
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
Features
• Silicon NPN, high Frequency, To-72 packaged, Transistor
• High Power Gain - GU(max)=11 dB (typ) @ f = 450 MHz
7 dB (typ) @ f = 1 GHz
• Low Noise Figure
NF = 1.5 dB (typ) @ f = 450 MHz
• High FT - 4 GHz (typ) @ IC = 15 mAdc
DESCRIPTION:
Designed primarily for use IN High Gain, low noise general purpose amplifiers.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC Collector Current
Thermal Data
P
D
Total Device Dissipation @ TA = 25ºC
Derate above 25ºC
MRF904
2
13
4
1. Emitter
2. Base
3. Collector
4. Case
TO-72
Value
15
25
3.0
30
200
1.14
Unit
Vdc
Vdc
Vdc
mA
mWatts
mW/ ºC
MSC1324.PDF 10-25-99
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
(off)
Symbol
Test Conditions
BVCEO
BVCBO
BVEBO
ICBO
(on)
HFE
Collector-Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
Collector-Base Breakdown Voltage
(IC= .1 mAdc, IE=0)
Emitter-Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 15 Vdc, IE = 0 Vdc)
DC Current Gain
(IC = 5.0 mAdc, VCE = 5 Vdc)
DYNAMIC
Symbol
Test Conditions
fT
CCB
NF
Current-Gain - Bandwidth Product
(IC = 15 mAdc, VCE = 10 Vdc, f = 1 GHz)
Junction Capacitance
(VCB = 10Vdc, IE=0, f=1 MHz)
Noise Figure
(IC = 5.0 mAdc, VCE = 6.0 Vdc, f = 450 MHz)
MRF904
Min.
15
25
3.0
-
Value
Typ.
-
-
-
-
Max.
-
-
-
50
Unit
Vdc
Vdc
Vdc
nA
30 - 200
-
Min.
-
-
-
Value
Typ.
4.0
1.0
1.5
Max.
-
1.5
-
Unit
GHz
pF
dB
MSC1324.PDF 10-25-99
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PDF 파일 내의 페이지 : 총 4 페이지
제조업체: Microsemi Corporation
( microsemi )
MRF904 transistor
데이터시트 다운로드 :
[ MRF904.PDF ]
[ MRF904 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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