BU406 반도체 회로 부품 판매점
(BU406 / BU407) NPN SILICON POWER TRANSISTORS
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 Bourns Electronic Solutions |
www.DataSheet4U.com
BU406, BU407
NPN SILICON POWER TRANSISTORS
● 7 A Continuous Collector Current
● 15 A Peak Collector Current
● 60 W at 25°C Case Temperature
TO-220 PACKAGE
(TOP VIEW)
B1
C2
E3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
Collector-base voltage (IE = 0)
Collector-emitter voltage (VBE = -2 V)
Collector-emitter voltage (IB = 0)
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature
Operating junction temperature range
Storage temperature range
NOTE 1: This value applies for tp ≤ 10 ms, duty cycle ≤ 2%.
BU406
BU407
BU406
BU407
BU406
BU407
SYMBOL
VCBO
VCEX
VCEO
VEB
IC
ICM
IB
Ptot
Tj
Tstg
VALUE
400
330
400
330
200
150
6
7
15
4
60
-55 to +150
-55 to +150
UNIT
V
V
V
V
A
A
A
W
°C
°C
PRODUCT INFORMATION
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
DataSheet4 U .com
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www.DataSheet4U.com
BU406, BU407
NPN SILICON POWER TRANSISTORS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX UNIT
Collector-emitter
V(BR)CEO breakdown voltage
IC = 30 mA IB = 0
140 V
ICES
Collector-emitter
cut-off current
IEBO
Emitter cut-off
current
VCE = 400 V
VCE = 330 V
VCE = 250 V
VCE = 200 V
VCE = 250 V
VCE = 200 V
VEB = 6 V
VBE = 0
VBE = 0
VBE = 0
VBE = 0
VBE = 0
VBE = 0
IC = 0
TC = 150°C
TC = 150°C
BU406
BU407
BU406
BU407
BU406
BU407
5
5
0.1
mA
0.1
1
1
1 mA
hFE
VCE(sat)
Forward current
transfer ratio
Collector-emitter
saturation voltage
VCE = 10 V
VCE = 10 V
IB = 0.5 A
IC = 4 A
IC = 0.5 A
IC = 5 A
(see Notes 2 and 3)
(see Notes 2 and 3)
12
20
1V
Base-emitter
VBE(sat) saturation voltage
IB = 0.5 A IC = 5 A
(see Notes 2 and 3)
1.2 V
Current gain
ft bandwidth product VCE = 5 V IC = 0.5 A
f = 1 MHz
(see Note 4)
6 MHz
Cob Output capacitance VCB = 20 V IE = 0
f = 1 MHz
60 pF
NOTES: 2. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
3. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
4. To obtain ft the [hFE] response is extrapolated at the rate of -6 dB per octave from f = 1 MHz to the frequency at which [hFE] = 1.
thermal characteristics
RθJC
RθJA
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN TYP MAX UNIT
2.08 °C/W
70 °C/W
inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS †
ts Storage time
t(off) Turn off time
IC = 5 A
IB(end) = 0.5A
(see Figures 1 and 2)
† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
MIN
TYP MAX
2.7
750
UNIT
µs
ns
2
DataSheet4 U .com
PRODUCT INFORMATION
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
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제조업체: Bourns Electronic Solutions
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BU406 transistor
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