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PDF BSS63LT1 Data sheet ( Hoja de datos )
| Número de pieza | BSS63LT1 | |
| Descripción | High Voltage Transistor(PNP) | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BSS63LT1/D
High Voltage Transistor
PNP Silicon
COLLECTOR
3
BSS63LT1
1
BASE
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Emitter Voltage
RBE = 10 kΩ
Collector Current — Continuous
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
BSS63LT1 = T1
Symbol
VCEO
VCER
IC
Value
–100
–110
–100
2
EMITTER
Unit
Vdc
Vdc
mAdc
Symbol
PD
RqJA
PD
RqJA
TJ, Tstg
Max
225
1.8
556
300
2.4
417
– 55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = –100 µAdc)
Collector – Emitter Breakdown Voltage
(IC = –10 µAdc, IE = 0, RBE = 10 kΩ)
Collector – Base Breakdown Voltage
(IE = –10 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = –10 mAdc)
Collector Cutoff Current
(VCB = –90 Vdc, IE = 0)
Collector Cutoff Current
(VCE = –110 Vdc, RBE = 10 kΩ)
Emitter Cutoff Current
(VEB = –6.0 Vdc, IC = 0)
1. FR– 5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company.
Symbol
V(BR)CEO
V(BR)CER
V(BR)CBO
V(BR)EBO
ICBO
ICER
IEBO
Min
–100
–110
–110
–6.0
—
—
—
REV 1
©MMotootorroollaa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
3
1
2
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
Typ Max Unit
Vdc
——
Vdc
——
Vdc
——
Vdc
——
nAdc
— –100
µAdc
— –10
nAdc
— –200
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet BSS63LT1.PDF ] | |
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