BSS79 반도체 회로 부품 판매점
NPN Silicon Switching Transistors
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 Infineon Technologies |
NPN Silicon Switching Transistors
High DC current gain: 0.1mA to 500 mA
Low collector-emitter saturation voltage
Complementary types: BSS80, BSS82 (PNP)
BSS79, BSS81
3
2
1 VPS05161
Type
BSS79B
BSS79C
BSS81B
BSS81C
Marking
CEs
CFs
CDs
CGs
1=B
1=B
1=B
1=B
Pin Configuration
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
Package
SOT23
SOT23
SOT23
SOT23
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Base current
Peak base current
Total power dissipation, TS = 77 °C
Junction temperature
Storage temperature
Symbol
VCEO
VCBO
VEBO
IC
ICM
IB
IBM
Ptot
Tj
Tstg
BSS79 BSS81
40 35
75
6
800
1
100
200
330
150
-65 ... 150
Thermal Resistance
Junction - soldering point 1)
RthJS
220
1For calculation of RthJA please refer to Application Note Thermal Resistance
Unit
V
V
mA
A
mA
mW
°C
K/W
1 Nov-30-2001
BSS79, BSS81
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0
BSS79
BSS81
V(BR)CEO
40
35
-
-
V
-
-
Collector-base breakdown voltage
V(BR)CBO 75
-
-
IC = 10 µA, IE = 0
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
V(BR)EBO 6 - -
Collector cutoff current
ICBO
- - 10 nA
VCB = 60 V, IE = 0
Collector cutoff current
VCB = 60 V, IE = 0 , TA = 150 °C
ICBO
- - 10 µA
Emitter cutoff current
VEB = 3 V, IC = 0
IEBO
- - 10 nA
DC current gain 1)
IC = 100 µA, VCE = 10 V
hFE
BSS79/81B
BSS79/81C
20 -
35 -
-
-
-
IC = 1 mA, VCE = 10 V
BSS79/81B
BSS79/81C
25 -
50 -
-
-
IC = 10 mA, VCE = 10 V
BSS79/81B
35 -
-
BSS79/81C
75 -
-
IC = 150 mA, VCE = 10 V
BSS79/81B
BSS79/81C
40 - 120
100 - 300
IC = 500 mA, VCE = 10 V
BSS79/81B
BSS79/82C
25 -
40 -
-
-
Collector-emitter saturation voltage1)
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
Base-emitter saturation voltage 1)
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
1) Pulse test: t ≤=300µs, D = 2%
VCEsat
V
- - 0.3
- - 1.3
VBEsat
- - 1.2
- - 2.0
2 Nov-30-2001
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제조업체: Infineon Technologies
( infineon )
BSS79 transistor
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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