|
|
Número de pieza | SPB80N06S2L-09 | |
Descripción | OptiMOS Power-Transistor | |
Fabricantes | Infineon Technologies | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SPB80N06S2L-09 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! OptiMOS® Power-Transistor
Feature
• N-Channel
• Enhancement mode
• Logic Level
• 175°C operating temperature
• Avalanche rated
• dv/dt rated
SPP80N06S2L-09
SPB80N06S2L-09
Product Summary
VDS 55 V
RDS(on) 8.5 mΩ
ID 80 A
P- TO263 -3-2
P- TO220 -3-1
Type
SPP80N06S2L-09
SPB80N06S2L-09
Package
P- TO220 -3-1
P- TO263 -3-2
Ordering Code
Q67060-S6031
Q67060-S6032
Marking
2N06L09
2N06L09
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current 1)
ID
TC=25°C
Pulsed drain current
TC=25°C
Avalanche energy, single pulse
ID=80 A , VDD=25V, RGS=25Ω
Repetitive avalanche energy, limited by Tjmax2)
Reverse diode dv/dt
IS=80A, VDS=44V, di/dt=200A/µs, Tjmax=175°C
Gate source voltage
Power dissipation
TC=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
ID puls
EAS
EAR
dv/dt
VGS
Ptot
Tj , Tstg
Value
80
73
320
370
19
6
±20
190
-55... +175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Page 1
2003-05-09
1 page SPP80N06S2L-09
SPB80N06S2L-09
5 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 80 µs
190
SPP80N06S2L-09
Ptot = 190W
A
i
160
140
120
100
80
VGS [V]
a 2.5
h
b 2.8
c 3.0
d 3.3
ge
f
3.5
3.9
g 4.1
f
h 4.5
i 10.0
60 e
40 d
20 c
b
0a
0 1 2 3 4 5 6V 8
VDS
6 Typ. drain-source on resistance
RDS(on) = f (ID)
parameter: VGS
SPP80N06S2L-09
28
mΩ
d
e
fg
h
24
22
20
18
16
14
12
10
8
i
6
4 VGS [V] =
de f
2 3.3 3.5 3.9
gh i
4.1 4.5 10.0
0
0 20 40 60 80 100 120 140 A 170
ID
7 Typ. transfer characteristics
ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 80 µs
160
A
8 Typ. forward transconductance
gfs = f(ID); Tj=25°C
parameter: gfs
100
S
80
120
70
100 60
80 50
40
60
30
40
20
20
10
0
0 0.5
1 1.5
2 2.5
3 3.5 4
V5
VGS
0
0 10 20 30 40 50 60 70 A 90
ID
Page 5
2003-05-09
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet SPB80N06S2L-09.PDF ] |
Número de pieza | Descripción | Fabricantes |
SPB80N06S2L-05 | OptiMOS Power-Transistor | Infineon Technologies |
SPB80N06S2L-05 | Power-Transistor | Infineon Technologies |
SPB80N06S2L-06 | OptiMOS Power-Transistor | Infineon Technologies |
SPB80N06S2L-06 | Power-Transistor | Infineon Technologies |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |