NTE51 반도체 회로 부품 판매점
Silicon NPN Transistor High Voltage / High Speed Switch
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 NTE |
NTE51
Silicon NPN Transistor
High Voltage, High Speed Switch
Description:
The NTE51 is a silicon NPN transistor in a TO220 type package designed for high–voltage, high–
speed power switching inductive circuits where fall time is critical. This device is particularly suited
for 115V and 220V SWITCHMODE applications such as switching regulators, Inverters, motor con-
trols, solenoid/relay drivers and deflection circuits.
Features:
D Reverse Bias SOA with Inductive Loads @ TC = +100°C
D 700V Blocking Capability
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Collector–Emitter Voltage, VCEV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V
Emitter Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9V
Collector Current,IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Base Current, IB
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Emitter Current, IE
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Total Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16mW/°C
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75W
Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67°C/W
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5°C/W
Lead Temperature (During Soldering, 1/8” from case, 5sec), TL . . . . . . . . . . . . . . . . . . . . . . . +275°C
Electrical Characteristics: (TC = +25°C unless otherwise Specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics (Note 1)
Collector–Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
VCEO(sus)
ICEV
IEBO
Ic = 10mA, IB = 0
VCEV = 700V, VBE(off) = 1.5V
VCEV = 700V, VBE(off) = 1.5V,
TC = +100°C
VEB = 9V, Ic = 0
400 –
––
––
––
–V
1 mA
1 mA
1 mA
Note 1. Pulse test: Pulse Width = 300µs, Duty Cycle = 2%.
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise Specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
ON Characteristics (Note 1)
DC Current Gain
Collector–Emitter Saturation Voltage
Dynamics Characteristics
hFE
VCE(sat)
VCE = 5V, IC = 1A
VCE = 5V, IC = 2A
IC = 1A, IB = 0.2A
IC = 2A, IB = 0.5A
IC = 2A, IB = 0.5A, TC = +100°C
IC = 4A, IB = 1A
Current Gain–Bandwidth Product
fT
Output Capacitance
Cob
Switching Characteristics (Resistive Load)
VCE = 10V, IC = 500mA, f = 1MHz
VCB = 10V, IE = 0, f = 0.1MHz
Delay Time
Rise Time
td VCC = 125V, IC = 2A, IB1 = IB2 = 0.4A,
tr tp = 25µs, Duty Cycle ≤ 1%
Storage Time
ts
Fall Time
tf
Switching Characteristics (Inductive Load, Clamped)
Voltage Storage Time
Crossover Time
Fall Time
tsv Vclamp = 300V, IB1 = 0.4A,
tc VBE(off) = 5V
tfi
10 – 60
8 – 40
– – 0.5 V
– – 0.6 V
– – 1.0 V
– – 1.0 V
4 – – MHz
– 65 – pF
– 0.025 0.1 µs
– 0.3 0.7 µs
– 1.7 4.0 µs
– 0.4 0.9 µs
– 0.9 4.0 µs
– 0.32 0.9 µs
– 0.16 – µs
Note 1. Pulse test: Pulse Width = 300µs, Duty Cycle = 2%.
.420 (10.67)
Max
.110 (2.79)
.147 (3.75)
Dia Max
.500
(12.7)
Max
.070 (1.78) Max
Base
.100 (2.54)
.250 (6.35)
Max
.500
(12.7)
Min
Emitter
Collector/Tab
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제조업체: NTE
( nte )
NTE51 transistor
데이터시트 다운로드 :
[ NTE51.PDF ]
[ NTE51 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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