NTE2539 반도체 회로 부품 판매점
Silicon NPN Transistor High Voltage / High Speed Switch
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 NTE |
NTE2539
Silicon NPN Transistor
High Voltage, High Speed Switch
Features:
D High Breakdown Voltage and Reliability
D Fast Switching Speed
D Wide ASO
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Collector Dissipation, PD
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5W
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 10%.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
VCB = 400V, IE = 0
VEB = 5V, IC = 0
VCE = 5V, IC = 3.2A
VCE = 5V, IC = 16A
VCE = 5V, IC = 10mA
IC = 16A, IB = 3.2A
IC = 16A, IB = 3.2A
Min Typ Max Unit
– – 10 µA
– – 10 µA
15 – 50
10 – –
10 – –
– – 0.8 V
– – 1.5 V
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Gain–Bandwidth Product
fT VCE = 10V, IC = 3.2A
Output Capacitance
Cob VCB = 10V, f = 1MHz
Collector–Base Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0
Collector–Emitter Breakdown Voltage V(BR)CEO IC = 10mA, RBE = ∞
Emitter–Base Breakdown Voltage V(BR)EBO IE = 1mA, IC = 0
Collector–Emitter Sustaining Voltage VCEX(sus) IC = 10A, IB1 = 1A, IB2 = –4A,
L = 200µH Clamped
– 20
– 300
500 –
400 –
7–
400 –
– MHz
– pF
–V
–V
–V
–V
Turn–On Time
Storage Time
Fall Time
ton IC = 20A, IB1 = 4A, IB2 = –8A, – – 0.5 µs
tstg RL = 10Ω, VCC = 200V
– – 2.5 µs
tf – – 0.3 µs
.190 (4.82)
.615 (15.62)
.787
(20.0)
.591
(15.02)
C
.126
(3.22)
Dia
.787
(20.0)
B CE
.215 (5.47)
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NTE2539 transistor
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[ NTE2539.PDF ]
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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