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PDF MMBR911 Data sheet ( Hoja de datos )
| Número de pieza | MMBR911 | |
| Descripción | NPN Silicon High-Frequency Transistor | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MMBR911 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
High-Frequency Transistor
Designed for low noise, wide dynamic range front–end amplifiers and
low–noise VCO’s. Available in a surface–mountable plastic package. This
Motorola small–signal plastic transistor offers superior quality and performance
at low cost.
• High Gain–Bandwidth Product
fT = 7.0 GHz (Typ) @ 30 mA
• Low Noise Figure
NF = 1.7 dB (Typ) @ 500 MHz
• High Gain
GNF = 17 dB (Typ) @ 10 mA/500 MHz
• State–of–the–Art Technology
Fine Line Geometry
Ion–Implanted Arsenic Emitters
Gold Top Metallization and Wires
Silicon Nitride Passivation
• Available in tape and reel packaging options:
T1 suffix = 3,000 units per reel
Order this document
by MMBR911LT1/D
MMBR911LT1
IC = 60 mA
LOW NOISE
HIGH–FREQUENCY
TRANSISTOR
NPN SILICON
CASE 318–08, STYLE 6
SOT–23
LOW PROFILE
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Power Dissipation @ Tcase = 75°C (1)
Derate linearly above Tcase = 75°C
Storage Temperature
Maximum Junction Temperature
THERMAL CHARACTERISTICS
Rating
Thermal Resistance, Junction to Case
Symbol
VCEO
VCBO
VEBO
IC
PD(max)
Tstg
TJmax
Symbol
RθJC
DEVICE MARKING
MMBR911LT1 = 7P
NOTE:
1. Case temperature measured on collector lead immediately adjacent to body of package.
Value
12
20
2.0
60
333
4.44
– 55 to +150
150
Value
225
Unit
Vdc
Vdc
Vdc
mA
mW
mW/°C
°C
°C
Unit
°C/W
REV 8
©MMOotoTrOolaR, OIncL.A19R97F DEVICE DATA
MMBR911LT1
1
1 page  
PACKAGE DIMENSIONS
A
L
3
BS
12
VG
C
DH
K
J
CASE 318–08
ISSUE AF
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
INCHES
DIM MIN MAX
A 0.1102 0.1197
B 0.0472 0.0551
C 0.0350 0.0440
D 0.0150 0.0200
G 0.0701 0.0807
H 0.0005 0.0040
J 0.0034 0.0070
K 0.0140 0.0285
L 0.0350 0.0401
S 0.0830 0.1039
V 0.0177 0.0236
MILLIMETERS
MIN MAX
2.80 3.04
1.20 1.40
0.89 1.11
0.37 0.50
1.78 2.04
0.013 0.100
0.085 0.177
0.35 0.69
0.89 1.02
2.10 2.64
0.45 0.60
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
MOTOROLA RF DEVICE DATA
MMBR911LT1
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MMBR911.PDF ] | |
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