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PDF MJH11019 Data sheet ( Hoja de datos )
| Número de pieza | MJH11019 | |
| Descripción | Complementary Darlington Silicon Power Transistors | |
| Fabricantes | ON | |
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MJH11017, MJH11019,
MJH11021 (PNP)
MJH11018, MJH11020,
MJH11022 (NPN)
Complementary Darlington
Silicon Power Transistors
These devices are designed for use as general purpose amplifiers,
low frequency switching and motor control applications.
Features
• High DC Current Gain @ 10 Adc — hFE = 400 Min (All Types)
• Collector−Emitter Sustaining Voltage
VCEO(sus) = 150 Vdc (Min) — MJH11018, 17
= 200 Vdc (Min) — MJH11020, 19
= 250 Vdc (Min) — MJH11022, 21
• Low Collector−Emitter Saturation Voltage
VCE(sat) = 1.2 V (Typ) @ IC = 5.0 A
= 1.8 V (Typ) @ IC = 10 A
• Monolithic Construction
• These are Pb−Free Devices
MAXIMUM RATINGS
Rating
Symbol
Collector−Emitter Voltage
MJH11018, MJH11017
MJH11020, MJH11019
MJH11022, MJH11021
VCEO
Max
150
200
250
Unit
Vdc
Collector−Base Voltage
MJH11018, MJH11017
MJH11020, MJH11019
MJH11022, MJH11021
VCB
Vdc
150
200
250
Emitter−Base Voltage
Collector Current − Continuous
− Peak (Note 1)
VEB 5.0 Vdc
IC 15 Adc
30
Base Current
Total Device Dissipation @ TC = 25_C
Derate above 25_C
IB 0.5 Adc
PD 150 W
1.2 W/_C
Operating and Storage Junction Temperature TJ, Tstg – 65 to
Range
+ 150
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol Max Unit
Thermal Resistance, Junction−to−Case
RqJC
0.83 _C/W
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle v 10%.
www.onsemi.com
15 AMPERE DARLINGTON
COMPLEMENTARY SILICON
POWER TRANSISTORS
150−250 VOLTS, 150 WATTS
NPN
COLLECTOR 2
PNP
COLLECTOR 2
BASE
1
BASE
1
EMITTER 3
MJH11018
MJH11020
MJH11022
EMITTER 3
MJH11017
MJH11019
MJH11021
1
2
3
SOT−93
(TO−218)
CASE 340D
STYLE 1
TO−247
CASE 340L
STYLE 3
NOTE: Effective June 2012 this device will
be available only in the TO−247
package. Reference FPCN# 16827.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
August, 2016 − Rev. 10
1
Publication Order Number:
MJH11017/D
1 page  
MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)
30
L = 200 mH
IC/IB1 ≥ 50
20 TC = 100°C
VBE(off) = 0 - 5.0 V
RBE = 47 W
DUTY CYCLE = 10%
10
MJH11017, MJH11018
MJH11019, MJH11020
MJH11021, MJH11022
0
0 20
60 100 140 180 220 260
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. Maximum Rated Reverse Bias
Safe Operating Area (RBSOA)
REVERSE BIAS
For inductive loads, high voltage and high current must be
sustained simultaneously during turn−off, in most cases,
with the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping, RC
snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltage−current conditions during
reverse biased turn−off. This rating is verified under
clamped conditions so that the device is never subjected to
an avalanche mode. Figure 5 gives RBSOA characteristics.
10,000
7000
5000
3000
2000
1000
VCE = 5.0 V
TC = 150°C
25°C
PNP
10,000
5000
VCE = 5.0 V
2000
1000
NPN
TC = 150°C
25°C
500
200 - 55°C
500
- 55°C
200
100
0.2 0.3
0.5 0.7 1.0
3.0 5.0
IC, COLLECTOR CURRENT (AMPS)
10 15
100
0.2 0.3
Figure 6. DC Current Gain
0.5 0.7 1.0
3.0 5.0 7.0 10 15
IC, COLLECTOR CURRENT (AMPS)
www.onsemi.com
5
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| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MJH11019.PDF ] | |
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