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PDF MJD6036 Data sheet ( Hoja de datos )
| Número de pieza | MJD6036 | |
| Descripción | SILICON POWER TRANSISTORS 4 AMPERES 80 VOLTS 20 WATTS | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Complementary Darlington
Power Transistors
DPAK For Surface Mount Applications
Designed for general purpose power and switching such as output or driver stages
in applications such as switching regulators, convertors, and power amplifiers.
• Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
• Straight Lead Version in Plastic Sleeves (“–1” Suffix)
• Available on 16 mm Tape and Reel for Automatic Handling (“T4” Suffix)
• Surface Mount Replacements for 2N6034– 2N6039 Series
• Monolithic Construction With Built–in Base–Emitter Shunt Resistors
• High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΕ Complementary Pairs Simplifies Designs
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎPeak
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ TC = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation (1) @ TA = 25_C
Derate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTemperature Range
Symbol
VCEO
VCB
VEB
IC
IB
PD
PD
TJ, Tstg
MJD6036
MJD6039
80
80
5
4
8
100
20
0.16
1.75
0.014
– 65 to + 150
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
Symbol
Max
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Ambient (1)
RθJC
RθJA
6.25
71.4
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
Symbol
Min Max
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Sustaining Voltage
(IC = 30 mAdc, IB = 0)
VCEO(sus) 80 —
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 40 Vdc, IB = 0)
ICEO
— 10
Unit
Vdc
Vdc
Vdc
Adc
mAdc
Watts
W/_C
Watts
W/_C
_C
Unit
_C/W
_C/W
Unit
Vdc
µAdc
v v(1) These ratings are applicable when surface mounted on the minimum pad sizes recommended.
* Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.
(continued)
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
Order this document
by MJD6036/D
MJDNP6N036
MJDPN6P039
SILICON
POWER TRANSISTORS
4 AMPERES
80 VOLTS
20 WATTS
CASE 369A–13
CASE 369–07
MINIMUM PAD SIZES
RECOMMENDED FOR
SURFACE MOUNTED
APPLICATIONS
inches
mm
1
1 page  
PNP MJD6036
MJD6036 MJD6039
NPN MJD6039
+ 0.8
*APPLIES FOR IC/IB < hFE/3
0
25°C to 150°C
– 0.8
+ 0.8
*APPLIED FOR IC/IB < hFE/3
0
– 0.8 25°C to 150°C
– 1.6 *θVC for VCE(sat)
– 2.4
– 3.2
θVB for VBE
–4
– 55°C to 25°C
25°C to 150°C
25°C to 150°C
– 1.6
– 2.4 θVC for VCE(sat)
– 55°C to 25°C
– 3.2
– 4 θVC for VBE
25°C to 150°C
25°C to 150°C
– 4.8
0.04 0.06
0.1 0.2
0.4 0.6 1
IC, COLLECTOR CURRENT (AMP)
2 34
– 4.8
0.04 0.06
0.1 0.2
0.4 0.6 1
IC, COLLECTOR CURRENT (AMP)
Figure 10. Temperature Coefficients
2 34
105
REVERSE
104
103 VCE = 30 V
FORWARD
105
REVERSE
104
103 VCE = 30 V
FORWARD
102
TJ = 150°C
101
102
TJ = 150°C
101
100°C
100
25°C
10–1
+ 0.6 + 0.4 + 0.2 0 – 0.2 – 0.4 – 0.6 – 0.8 – 1 – 1.2 – 1.4
VBE, BASE–EMITTER VOLTAGE (VOLTS)
100 100°C
10–1 25°C
– 0.6 – 0.4 – 0.2 0 + 0.2 + 0.4 + 0.6 + 0.8 + 1
VBE, BASE–EMITTER VOLTAGE (VOLTS)
+ 1.2 + 1.4
Figure 11. Collector Cut–Off Region
PNP
MJD6036
BASE
COLLECTOR
NPN
MJD3039
COLLECTOR
BASE
≈ 8 k ≈ 60
≈ 8 k ≈ 60
EMITTER
Figure 12. Darlington Schematic
EMITTER
Motorola Bipolar Power Transistor Device Data
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MJD6036.PDF ] | |
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