(PDF) MJD340 Datasheet - High Voltage Power Transistors D-PAK for Surface Mount Applications

Número de pieza	MJD340
Descripción	High Voltage Power Transistors D-PAK for Surface Mount Applications
Fabricantes	Fairchild
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No Preview Available ! MJD340 High Voltage Power Transistors D-PAK for Surface Mount Applications • Lead Formed for Surface Mount Applications (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) 1 D-PAK 1 I-PAK 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter VCBO VCEO VEBO IC ICP PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation (TC=25°C) Collector Dissipation (Ta=25°C) Junction Temperature Storage Temperature Value 300 300 3 0.5 0.75 15 1.56 150 - 65 ~ 150 Units V V V A A W W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition VCEO(sus) * Collector Emitter Sustaining Voltage ICEO Collector Cut-off Current IEBO Emitter Cut-off Current hFE * DC Current Gain * Pulse Test: PW≤300µs, Duty Cycle≤2% IC = 1mA, IB = 0 VCB = 300V, IE =0 VEB = 3V, IC = 0 VCE = 10V, IC = 50mA Min. 300 30 Max. 0.1 0.1 240 Units V mA mA ©2001 Fairchild Semiconductor Corporation Rev. A2, June 2001 1 page

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PDF MJD340 Data sheet ( Hoja de datos )