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PDF PTF10122 Data sheet ( Hoja de datos )
| Número de pieza | PTF10122 | |
| Descripción | 50 Watts WCDMA/ 2.1-2.2 GHz GOLDMOS Field Effect Transistor | |
| Fabricantes | Ericsson | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de PTF10122 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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PTF 10122
50 Watts WCDMA, 2.1–2.2 GHz
GOLDMOS™ Field Effect Transistor
Description
The PTF 10122 is an internally matched common source N-channel
enhancement-mode lateral MOSFET intended for WCDMA applications
from 2.1 to 2.2 GHz. It is rated at 50 watts power output, with 11 dB of
gain. Nitride surface passivation and full gold metallization ensure ex-
cellent device lifetime and reliability.
Typical Output Power vs. Input Power
60 50
50
40
30
20
10
0
0
40
30
VDD = 28 V
IDQ = 600 mA
f = 2.17 GHz
12 3 45
Input Power (Watts)
20
10
0
6
• INTERNALLY MATCHED
• Guaranteed Performance at 2.17 GHz, 28 V
- Output Power = 50 Watts Min
- Gain = 11.0 dB Typ
- Efficiency = 35% Typ
• Full Gold Metallization
• Silicon Nitride Passivated
• Back Side Common Source
• Excellent Thermal Stability
• 100% Lot Traceability
10122A-1234569946
Package 20248
RF Specifications (100% Tested)
Characteristic
Gain
(VDD = 28 V, POUT = 15 W, IDQ = 600 mA, f = 2.11 GHz)
Power Output at 1 dB Compression
(VDD = 28 V, IDQ = 600 mA, f = 2.17 GHz)
Drain Efficiency
(VDD = 28 V, POUT = 50 W, IDQ = 600 mA, f = 2.17 GHz)
Load Mismatch Tolerance
(VDD = 28 V, POUT = 50 W, IDQ = 600 mA, f = 2.17 GHz
—all phase angles at frequency of test)
All published data at TCASE = 25°C unless otherwise indicated.
Symbol Min
Gps
P-1dB
hD
Y
10.0
50
30
—
Typ
11.0
—
35
—
Max Units
— dB
— Watts
—%
10:1 —
e
1
1 page  
e
PTF 10122
Parts Layout (not to scale)
Artwork (not to scale)
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet PTF10122.PDF ] | |
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