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Número de pieza | 2SD1750 | |
Descripción | Silicon NPN triple diffusion planar type Darlington | |
Fabricantes | Panasonic Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2SD1750 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! Power Transistors
2SD1750, 2SD1750A
Silicon NPN triple diffusion planar type Darlington
For midium speed power switching
Complementary to 2SB1180 and 2SB1180A
7.0±0.3
3.0±0.2
Unit: mm
3.5±0.2
s Features
q High foward current transfer ratio hFE
q High-speed switching
q I type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to 2SD1750
base voltage 2SD1750A
VCBO
60
80
Collector to 2SD1750
emitter voltage 2SD1750A
VCEO
60
80
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VEBO
ICP
IC
PC
7
12
8
15
1.3
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff
2SD1750
current
2SD1750A
Emitter cutoff current
Collector to emitter 2SD1750
voltage
2SD1750A
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
ICBO
IEBO
VCEO
hFE1*
hFE2
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
VCB = 60V, IE = 0
VCB = 80V, IE = 0
VEB = 7V, IC = 0
IC = 30mA, IB = 0
VCE = 3V, IC = 4A
VCE = 3V, IC = 8A
IC = 4V, IB = 8mA
IC = 4V, IB = 8mA
VCE = 10V, IC = 0.5A, f = 1MHz
IC = 4A, IB1 = 8mA, IB2 = –8mA
*hFE1 Rank classification
Rank
Q
P
hFE1 2000 to 5000 4000 to 10000
Internal Connection
B
1.1±0.1
0.75±0.1
0.85±0.1
0.4±0.1
2.3±0.2
4.6±0.4
123
7.0±0.3
2.0±0.2
3.0±0.2
1:Base
2:Collector
3:Emitter
I Type Package
Unit: mm
3.5±0.2
0 to 0.15
1.1±0.1
0.75±0.1
123
2.3±0.2
4.6±0.4
2.5
0.5 max.
0.9±0.1
0 to 0.15
1:Base
2:Collector
3:Emitter
I Type Package (Y)
min
60
80
2000
500
C
typ max Unit
100
µA
100
2 mA
V
10000
1.5 V
2V
20 MHz
0.5 µs
4 µs
1 µs
E
1
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet 2SD1750.PDF ] |
Número de pieza | Descripción | Fabricantes |
2SD1750 | Silicon NPN triple diffusion planar type Darlington | Panasonic Semiconductor |
2SD1750A | Silicon NPN triple diffusion planar type Darlington | Panasonic Semiconductor |
2SD1751 | Silicon NPN triple diffusion planar type(For power amplification) | Panasonic Semiconductor |
2SD1752 | Silicon NPN epitaxial planar type | Panasonic Semiconductor |
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