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PDF 2SD1535 Data sheet ( Hoja de datos )
| Número de pieza | 2SD1535 | |
| Descripción | Silicon NPN triple diffusion planar type Darlington(For high power amplification) | |
| Fabricantes | Panasonic Semiconductor | |
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Power Transistors
2SD1535
Silicon NPN triple diffusion planar type Darlington
For high power amplification
s Features
q Extremely satisfactory linearity of the forward current transfer
ratio hFE
q High collector to base voltage VCBO
q Wide area of safe operation (ASO)
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO
VCEO
VEBO
ICP
IC
IB
PC
500
400
12
14
7
0.5
50
2
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
A
A
A
W
˚C
˚C
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
2.54±0.25
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
Internal Connection
C
B
E
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
*VCEO(sus) Test circuit
60Hz
ICBO
ICEO
IEBO
VCEO(sus)*
hFE1
hFE2
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
VCB = 500V, IE = 0
VCE = 400V, IB = 0
VEB = 12V, IC = 0
IC = 100mA, RBZ = ∞, L = 25mH
VCE = 2V, IC = 2A
VCE = 2V, IC = 6A
IC = 7A, IB = 70mA
IC = 7A, IB = 70mA
VCE = 10V, IC = 0.5A, f = 1MHz
IC = 7A, IB1 = 70mA, IB2 = –70mA,
VCC = 300V
X
L 25mH
IC(A)
0.2
120Ω
6V
Y
1Ω 15V
G
0.1
80
min typ
400
500
200
20
1.5
5.0
6.5
VCE(V)
max Unit
0.1 mA
0.1 mA
100 mA
mA
2.0 V
2.5 V
MHz
µs
µs
µs
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SD1535.PDF ] | |
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