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PDF 2SD1350A Data sheet ( Hoja de datos )
| Número de pieza | 2SD1350A | |
| Descripción | Silicon NPN triple diffusion planer type | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Transistor
2SD1350, 2SD1350A
Silicon NPN triple diffusion planer type
For high breakdown voltage switching
s Features
q High collector to base voltage VCBO.
q High collector to emitter voltage VCEO.
q Large collector power dissipation PC.
q Low collector to emitter saturation voltage VCE(sat).
q M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to 2SD1350
base voltage 2SD1350A
VCBO
400
600
V
Collector to 2SD1350
emitter voltage 2SD1350A
VCEO
400
500
V
Emitter to base voltage
VEBO
5
V
Peak collector current
ICP
1A
Collector current IC 500 mA
Collector power dissipation PC* 1 W
Junction temperature
Tj
150 ˚C
Storage temperature
Tstg –55 ~ +150 ˚C
* Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
s Electrical Characteristics (Ta=25˚C)
6.9±0.1
1.5
1.5 R0.9
R0.9
Unit: mm
2.5±0.1
1.0
0.85
0.55±0.1
321
0.45±0.05
2.5 2.5
1:Base
2:Collector
3:Emitter
EIAJ:SC–71
M Type Mold Package
Parameter
Symbol
Conditions
min typ max Unit
Collector to base
voltage
2SD1350
VCBO
2SD1350A
IC = 100µA, IE = 0
400
600
V
Collector to emitter 2SD1350
voltage
VCEO
2SD1350A
IC = 500µA, IB = 0
400
500
V
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
2SD1350
2SD1350A
VEBO
hFE
VCE(sat)
VBE(sat)
fT
Cob
ton
Fall time
2SD1350
tf
2SD1350A
Storage time
2SD1350
tstg
2SD1350A
IE = 100µA, IC = 0
VCE = 5V, IC = 30mA
IC = 250mA, IB = 50mA*
IC = 250mA, IB = 50mA*
VCB = 30V, IE = –20mA, f = 200MHz
VCB = 30V, IE = 0, f = 1MHz
VCC = 200V, IC = 100mA
IB1 = 10mA, IB2 = –10mA
VCC = 200V, IC = 100mA
IB1 = 10mA, IB2 = –10mA
VCC = 200V, IC = 100mA
IB1 = 10mA, IB2 = –10mA
5
30
V
1.5 V
1.5 V
55 MHz
7 pF
0.4
µs
1.0
0.7
µs
1.0
3.6
µs
4.0
* Pulse measurement
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SD1350A.PDF ] | |
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