BC338 반도체 회로 부품 판매점
Amplifier Transistor
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 Motorola Inc |
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BC337/D
Amplifier Transistors
NPN Silicon
COLLECTOR
1
BC337,-16,-25,-40
BC338,-16,-25,-40
2
BASE
3
EMITTER
MAXIMUM RATINGS
Rating
Symbol BC337 BC338 Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
45 25
50 30
5.0
800
625
5.0
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5 Watt
12 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient RqJA
200 °C/W
Thermal Resistance, Junction to Case
RqJC
83.3 °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 10 mA, IB = 0)
BC337
BC338
V(BR)CEO
Collector – Emitter Breakdown Voltage
(IC = 100 µA, IE = 0)
BC337
BC338
V(BR)CES
Emitter – Base Breakdown Voltage
(IE = 10 mA, IC = 0)
Collector Cutoff Current
(VCB = 30 V, IE = 0)
(VCB = 20 V, IE = 0)
Collector Cutoff Current
(VCE = 45 V, VBE = 0)
(VCE = 25 V, VBE = 0)
Emitter Cutoff Current
(VEB = 4.0 V, IC = 0)
BC337
BC338
BC337
BC338
V(BR)EBO
ICBO
ICES
IEBO
Min
45
25
50
30
5.0
—
—
—
—
—
1
2
3
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
Typ Max Unit
Vdc
——
——
Vdc
——
——
— — Vdc
nAdc
— 100
— 100
nAdc
— 100
— 100
— 100 nAdc
©MMotootorroollaa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1
BC337,-16,-25,-40 BC338,-16,-25,-40
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mA, VCE = 1.0 V)
(IC = 300 mA, VCE = 1.0 V)
BC337/BC338
hFE —
100 — 630
BC337–16/BC338–16
100 — 250
BC337–25/BC338–25
160 — 400
BC337–40/BC338–40
250 — 630
60 — —
Base–Emitter On Voltage
(IC = 300 mA, VCE = 1.0 V)
VBE(on)
—
— 1.2 Vdc
Collector – Emitter Saturation Voltage
(IC = 500 mA, IB = 50 mA)
VCE(sat)
—
— 0.7 Vdc
SMALL–SIGNAL CHARACTERISTICS
Output Capacitance
(VCB = 10 V, IE = 0, f = 1.0 MHz)
Cob — 15 — pF
Current – Gain — Bandwidth Product
(IC = 10 mA, VCE = 5.0 V, f = 100 MHz)
fT — 210 — MHz
1.0
0.7 D = 0.5
0.5
0.3 0.2
0.2 0.1
0.1 0.05
0.07 0.02
0.05
0.03 0.01
0.02
SINGLE PULSE
SINGLE PULSE
0.01
0.001 0.002
0.005 0.01 0.02
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.05 0.1 0.2
0.5 1.0 2.0
t, TIME (SECONDS)
Figure 1. Thermal Response
θJC(t) = (t) θJC
θJC = 100°C/W MAX
θJA(t) = r(t) θJA
θJA = 375°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) θJC(t)
5.0 10 20
50 100
1000
1.0 s 1.0 ms
TJ = 135°C
dc
TC = 25°C
100 µs
dc
100 TA = 25°C
10
1.0
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
(APPLIES BELOW RATED VCEO)
3.0 10 30
VCE, COLLECTOR–EMITTER VOLTAGE
100
Figure 2. Active Region — Safe Operating Area
1000
VCE = 1 V
TJ = 25°C
100
10
0.1
1.0 10 100
IC, COLLECTOR CURRENT (AMP)
Figure 3. DC Current Gain
1000
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data
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제조업체: Motorola Inc
( motorola )
BC338 transistor
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