파트넘버.co.kr BD829 데이터시트 PDF


BD829 반도체 회로 부품 판매점

NPN power transistors



NXP Semiconductors 로고
NXP Semiconductors
BD829 데이터시트, 핀배열, 회로
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D067
BD825; BD829
NPN power transistors
Product specification
Supersedes data of 1997 Jun 20
File under Discrete Semiconductors, SC04
1998 May 29

BD829 데이터시트, 핀배열, 회로
Philips Semiconductors
NPN power transistors
Product specification
BD825; BD829
FEATURES
• High current (max. 1 A)
• Low voltage (max. 80 V).
APPLICATIONS
• General purpose
• Driver stages in hi-fi amplifiers and television circuits.
DESCRIPTION
NPN power transistor in a TO-202; SOT128B plastic
package. PNP complements: BD826 and BD830.
PINNING
PIN
1
2
3
handbook, halfpage
DESCRIPTION
emitter
collector, connected to metal part of
mounting surface
base
2
3
1
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCBO
collector-base voltage
BD825
BD829
VCEO
collector-emitter voltage
BD825
BD829
ICM peak collector current
Ptot total power dissipation
hFE DC current gain
fT transition frequency
12 3
MAM305
Fig.1 Simplified outline (TO-202; SOT128B)
and symbol.
CONDITIONS
open emitter
open base
Tamb ≤ 25 °C
Tmb ≤ 50 °C
IC = 150 mA; VCE = 2 V
IC = 50 mA; VCE = 5 V; f = 100 MHz
MIN. TYP. MAX. UNIT
− − 45 V
− − 100 V
− − 45 V
− − 80 V
− − 1.5 A
−−2W
−−8W
95 −
165
− 250 − MHz
1998 May 29
2



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