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Número de pieza | BLT52 | |
Descripción | UHF power transistor | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BLT52 (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
No Preview Available ! DISCRETE SEMICONDUCTORS
DATA SHEET
M3D175
BLT52
UHF power transistor
Product specification
Supersedes data of 1997 Oct 15
1998 Jan 28
1 page Philips Semiconductors
UHF power transistor
Product specification
BLT52
APPLICATION INFORMATION
RF performance at Tmb ≤ 60 °C in a common emitter test circuit.
MODE OF OPERATION
f
(MHz)
VCE
(V)
CW, class-B
7.5
470
6
PL
(W)
7
3
Gp
(dB)
≥8
typ. 9.5
≥8
typ. 9.5
ηC
(%)
≥50
typ. 65
≥50
typ. 55
Ruggedness in class-B operation
The BLT52 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the
following conditions: CW, class-B operation; f = 470 MHz; VCE = 9 V and PL = 7 W; Tmb ≤ 60 °C.
handbook,1h0alfpage
Gp
(dB)
8
6
4
2
0
02
MBK250
100
ηC
Gp (%)
80
ηC 60
40
20
0
4 68
PL (W)
CW, class-B operation; f = 470 MHz; VCE = 6 V;
tuned at PL = 3 W; Tmb ≤ 60 °C.
Fig.5 Power gain and collector efficiency as
functions of load power; typical values.
10
handbook, halfpage
PL
(W)
8
6
4
2
0
0
1
MGD257
23
PIN (W)
CW, class-B operation; f = 470 MHz; VCE = 6 V;
tuned at PL = 3 W; Tmb ≤ 60 °C.
Fig.6 Load power as a function of input power;
typical values.
1998 Jan 28
5
5 Page Philips Semiconductors
UHF power transistor
NOTES
Product specification
BLT52
1998 Jan 28
11
11 Page |
Páginas | Total 12 Páginas | |
PDF Descargar | [ Datasheet BLT52.PDF ] |
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