BSS64 반도체 회로 부품 판매점
Surface mount Si-Epitaxial PlanarTransistors
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 Diotec Semiconductor |
BSS 64
NPN
Switching Transistors
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
NPN
2.9 ±0.1
0.4
3
Type
Code
1
1.9
2
1.1
Dimensions / Maße in mm
1=B 2=E 3=C
Power dissipation – Verlustleistung
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
250 mW
SOT-23
(TO-236)
0.01 g
Maximum ratings (TA = 25/C)
Collector-Emitter-voltage
B open
Collector-Base-voltage
E open
Emitter-Base-voltage
C open
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (dc)
Peak Collector current – Kollektor-Spitzenstrom
Peak Base current – Basis-Spitzenstrom
Junction temp. – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
VCE0
VCB0
VEB0
Ptot
IC
ICM
IBM
Tj
TS
Grenzwerte (TA = 25/C)
BSS 64
80 V
120 V
5V
250 mW 1)
100 mA
250 mA
100 mA
150/C
- 65…+ 150/C
Characteristics (Tj = 25/C)
Collector-Base cutoff current – Kollektorreststrom
IE = 0, VCB = 90 V
IE = 0, VCB = 90 V, Tj = 150/C
Emitter-Base cutoff current – Emitterreststrom
ICB0
ICB0
IC = 0, VEB = 5 V
IEB0
Collector saturation volt. – Kollektor-Sättigungsspg. 1)
IC = 4 mA, IB = 0.4 mA
IC = 50 mA, IB = 15 mA
VCEsat
VCEsat
Kennwerte (Tj = 25/C)
Min.
Typ.
Max.
– – 100 nA
– – 50 :A
–
1 nA
200 nA
– – 150 mV
– – 200 mV
1) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
16
01.11.2003
Switching Transistors
Characteristics (Tj = 25/C)
DC current gain – Kollektor-Basis-Stromverhältnis 1)
VCE = 1 V, IC = 1 mA
VCE = 1 V, IC = 10 mA
VCE = 1 V, IC = 20 mA
Gain-Bandwidth Product – Transitfrequenz
hFE
hFE
hFE
VCE = 5 V, IC = 25 mA, f = 100 MHz
fT
Collector-Base Capacitance – Kollektor-Basis-Kapazität
VCB = 10 V, IE = ie = 0, f = 1 MHz
CCB0
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
BSS 64
Kennwerte (Tj = 25/C)
Min.
Typ.
Max.
– 60
20 80
– 55
–
–
–
60 MHz 105 MHz
–
– 3 pF –
RthA 420 K/W 2)
BSS 63
Marking - Stempelung
BSS 64 = AM
1) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
2) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
01.11.2003
17
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제조업체: Diotec Semiconductor
( diotec )
BSS64 transistor
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
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