BSS64 반도체 회로 부품 판매점
NPN high-voltage transistor
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 NXP Semiconductors |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BSS64
NPN high-voltage transistor
Product specification
Supersedes data of 1997 Sep 04
1999 Apr 15
Philips Semiconductors
NPN high-voltage transistor
Product specification
BSS64
FEATURES
• Low current (max. 100 mA)
• High voltage (max. 80 V).
APPLICATIONS
• High-voltage general purpose and switching
applications
• Intended for application in thick and thin-film circuits.
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
DESCRIPTION
NPN transistor in a SOT23 plastic package.
PNP complement: BSS63.
MARKING
TYPE NUMBER
BSS64
MARKING CODE(1)
AM∗
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
handbook, halfpage
3
3
1
12
2
Top view
MAM255
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
Tamb ≤ 25 °C
MIN.
−
−
−
−
−
−
−
−65
−
−65
MAX.
120
80
5
100
250
100
250
+150
150
+150
UNIT
V
V
V
mA
mA
mA
mW
°C
°C
°C
1999 Apr 15
2
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BSS64 transistor
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