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PDF BSS192 Data sheet ( Hoja de datos )
| Número de pieza | BSS192 | |
| Descripción | P-channel enhancement mode vertical D-MOS transistor | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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DISCRETE SEMICONDUCTORS
DATA SHEET
BSS192
P-channel enhancement mode
vertical D-MOS transistor
Product specification
Supersedes data of July 1993
File under Discrete Semiconductors, SC13b
1997 Jun 20
1 page  
Philips Semiconductors
P-channel enhancement mode
vertical D-MOS transistor
Product specification
BSS192
handbook,−h1alfpage
ID
(A)
−0.8
(1)
MDA177
(2)
−0.6
−0.4
−0.2
0
0
(3)
(4)
(5)
−5 −10 −15 −20 −25
VDS (V)
Tj = 25 °C.
(1) VGS = 10 V.
(2) VGS = 6 V.
(3) VGS = 5 V.
(4) VGS = 4 V.
(5) VGS = 3 V.
Fig.6 Output characteristics; typical values.
handbook,−h1alfpage
ID
(A)
−0.8
MDA178
−0.6
−0.4
−0.2
0
0 −2 −4 −6 −8 −10
VGS (V)
VDS = −10 V; Tj = 25 °C.
Fig.7 Transfer characteristic; typical values.
−103
handbook, halfpage
(1)
ID
(mA)
−102
MDA179
(2)
(3)
1.2
handbook, halfpage
k
1.1
1
0.9
MDA182
−10
8
12 16 20 24 28
RDSon (Ω)
Tj = 25 °C.
(1) VGS = −10 V.
(2) VGS = −5 V.
(3) VGS = −4 V.
Fig.8 Drain current as a function of drain-source
on-state resistance; typical values.
0.8
0.7
−50 0 50 100 Tj (oC) 150
k = V-----GV----SG---t-Sh---t--ha---t--a--2-t--5--T--°--j-C---
VGSth at ID = −1 mA.
Fig.9 Temperature coefficient of gate-source
threshold voltage; typical values.
1997 Jun 20
5
5 Page 
Philips Semiconductors
P-channel enhancement mode vertical
D-MOS transistor
NOTES
Product specification
BSS192
1997 Jun 20
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet BSS192.PDF ] | |
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