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PDF BSP299 Data sheet ( Hoja de datos )
| Número de pieza | BSP299 | |
| Descripción | SIPMOS Small-Signal Transistor (N channel Enhancement mode Avalanche rated) | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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BSP 299
SIPMOS ® Small-Signal Transistor
• N channel
• Enhancement mode
• Avalanche rated
• VGS(th)= 2.1 ... 4.0 V
Pin 1 Pin 2 Pin 3 Pin 4
GD S D
Type
BSP 299
Type
BSP 299
VDS
500 V
ID
0.4 A
Ordering Code
Q67000-S225
RDS(on)
4Ω
Package
SOT-223
Tape and Reel Information
E6327
Marking
BSP 299
Maximum Ratings
Parameter
Continuous drain current
TA = 44 °C
DC drain current, pulsed
TA = 25 °C
Avalanche energy, single pulse
ID = 1.2 A, VDD = 50 V, RGS = 25 Ω
L = 163 mH, Tj = 25 °C
Gate source voltage
Power dissipation
TA = 25 °C
Symbol
ID
IDpuls
EAS
VGS
Ptot
Values
0.4
1.6
130
± 20
1.8
Unit
A
mJ
V
W
Semiconductor Group
1
Sep-12-1996
1 page  
BSP 299
Power dissipation
Ptot = ƒ(TA)
2.0
W
Ptot 1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0 20 40 60 80 100 120 °C 160
TA
Safe operating area ID=f(VDS)
parameter : D = 0, TC=25°C
Drain current
ID = ƒ(TA)
parameter: VGS ≥ 10 V
0.45
A
ID 0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
0
20 40 60 80 100 120 °C 160
TA
Transient thermal impedance
Zth JA = ƒ(tp)
parameter: D = tp / T
10 2
K/W
10 1
ZthJC
10 0
10 -1
10 -2
10 -3
10 -4
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
Semiconductor Group
10 -5
10 -8
10 -7
10 -6
10 -5
10 -4
10 -3
10 -2 10 -1s 10 0
tp
5 Sep-12-1996
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet BSP299.PDF ] | |
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