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PDF BSP19 Data sheet ( Hoja de datos )
| Número de pieza | BSP19 | |
| Descripción | NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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SOT223 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 FEBRUARY 1996
FEATURES
* High VCEO 350V
* Low saturation voltage
COMPLEMENTARY TYPE BSP16
PARTMARKING DETAIL BSP19
BSP19
C
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature
Range
SYMBOL
VCBO
VCEO
VEBO
ICM
IC
Ptot
Tj:Tstg
VALUE
400
350
5
1
0.5
2
-55 to +150
UNIT
V
V
V
A
A
W
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 400
V IC=100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO 350
V IC=10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO 5
V IE=100µA
Collector Cut-Off
Current
ICBO
20 nA VCB=300V
Emitter Cut-Off Current IEBO
Collector-Emitter
Saturation Voltage
VCE(sat)
0.1 µA VEB=3V
0.5 V
IC=50mA, IB=4mA*
Base-Emitter
Saturation Voltage
VBE(sat)
1.3 V
IC=50mA, IB=4mA*
Static Forward Current hFE
Transfer Ratio
Transition Frequency fT
40
50
70
MHz
IC=20mA, VCE=5V*
IC=100mA, VCE=5V*
IC=10mA, VCE=10V
f = 20MHz
Output Capacitance
Cobo
10 pF VCB=20V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
For typical characteristics graphs see FZT658 datasheet.
3 - 60
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet BSP19.PDF ] | |
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