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PDF BSO211P Data sheet ( Hoja de datos )
| Número de pieza | BSO211P | |
| Descripción | OptiMOS -P Small-Signal-Transistor | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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Preliminary data
BSO211P
OptiMOS-P Small-Signal-Transistor
Feature
• Dual P-Channel
• Enhancement mode
• Super Logic Level (2.5 V rated)
• 150°C operating temperature
• Avalanche rated
• dv/dt rated
Product Summary
VDS -20 V
RDS(on) 67 mΩ
ID -4.7 A
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2
Top View SIS00070
Type
BSO211P
Package
SO 8
Ordering Code
Q67042-S4064
Maximum Ratings,at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
TA=25°C
TA=70°C
ID
Pulsed drain current
TA=25°C
Avalanche energy, single pulse
ID=-4.7 A , VDD=-10V, RGS=25Ω
Reverse diode dv/dt
ID puls
EAS
dv/dt
IS=-4.7A, VDS=-16V, di/dt=200A/µs, Tjmax=150°C
Gate source voltage
Power dissipation
TA=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
VGS
Ptot
Tj , Tstg
Value
-4.7
-3.8
-18.8
28
-6
±12
2
-55... +150
55/150/56
Unit
A
mJ
kV/µs
V
W
°C
Page 1
2002-01-22
1 page  
Preliminary data
BSO211P
5 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 80 µs
40
A Vgs = -4V
Vgs = -3.5V
30
Vgs = -4.5V
25 Vgs = -5V
Vgs = -6V
Vgs = -7V
Vgs = -3V
20
15
10
Vgs = -2.5V
5
0
0 1 2 3 4 5 6 7 8 V 10
- VDS
7 Typ. transfer characteristics
ID= f ( VGS ); |VDS|≥ 2 x |ID| x RDS(on)max
parameter: tp = 80 µs
20
A
6 Typ. drain-source on resistance
RDS(on) = f (ID)
parameter: VGS
0.1
Ω Vgs = -2.5V
Vgs = -3V
0.08
0.07
0.06
0.05
0.04
Vgs= - 3.5V
0.03 Vgs= - 4V
Vgs = - 4.5V
0.02 Vgs = - 5V
Vgs= - 6V
0.01 Vgs = - 7V
0
0 5 10 15 20 25 30 A 40
- ID
8 Typ. forward transconductance
gfs = f(ID); Tj=25°C
parameter: tp = 80 µs
20
S
16
14
12
10
8
6
4
2
0
0 0.5 1 1.5 2 V
3
- VGS
Page 5
16
14
12
10
8
6
4
2
0
0 2 4 6 8 10 12 14 16 A 20
- ID
2002-01-22
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet BSO211P.PDF ] | |
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