|
|
Número de pieza | BUZ349 | |
Descripción | SIPMOS Power Transistor | |
Fabricantes | Infineon Technologies AG | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BUZ349 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
BUZ 349
Pin 1
G
Pin 2
D
Pin 3
S
Type
BUZ 349
VDS
100 V
ID
32 A
RDS(on)
0.06 Ω
Maximum Ratings
Parameter
Continuous drain current
TC = 27 ˚C
Pulsed drain current
TC = 25 ˚C
Avalanche current,limited by Tjmax
Avalanche energy,periodic limited by Tjmax
Avalanche energy, single pulse
ID = 32 A, VDD = 25 V, RGS = 25 Ω
L = 322 µH, Tj = 25 ˚C
Gate source voltage
Power dissipation
TC = 25 ˚C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Package
TO-218 AA
Symbol
ID
IDpuls
IAR
EAR
EAS
VGS
Ptot
Tj
Tstg
RthJC
RthJA
Ordering Code
C67078-S3113-A2
Values
32
Unit
A
128
32
15 mJ
220
± 20
125
-55 ... + 150
-55 ... + 150
≤1
75
E
55 / 150 / 56
V
W
˚C
K/W
Data Sheet
1
05.99
1 page BUZ 349
Power dissipation
Ptot = ƒ(TC)
130
W
110
Ptot 100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 ˚C 160
TC
Safe operating area
ID = ƒ(VDS)
parameter: D = 0.01, TC = 25˚C
10 3
A
ID
10 2
I
V
R
10 1
tp = 25.0µs
100 µs
1 ms
10 ms
Drain current
ID = ƒ(TC)
parameter: VGS ≥ 10 V
34
A
28
I
D
24
20
16
12
8
4
0
0 20 40 60 80 100 120 ˚C 160
TC
Transient thermal impedance
Zth JC = ƒ(tp)
parameter: D = tp / T
10 1
K/W
ZthJC
10 0
10 -1
10 -2
10 -3
10 -4
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10 0
10 0
Data Sheet
DC
10 1 V 10 2
VDS
10 -5
10 -7
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1 s 10 0
tp
5 05.99
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet BUZ349.PDF ] |
Número de pieza | Descripción | Fabricantes |
BUZ34 | main ratings | Siemens Semiconductor Group |
BUZ341 | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) | Siemens Semiconductor Group |
BUZ341 | SIPMOS Power Transistor | Infineon Technologies AG |
BUZ342 | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Ultra low on-resistance) | Siemens Semiconductor Group |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |