BUX39 반도체 회로 부품 판매점
HIGH CURRENT HIGH SPEED HIGH POWER SILICON NPN PLANAR TRANSISTOR
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 Seme LAB |
SEME
LAB
BUX39
MECHANICAL DATA
Dimensions in mm (inches)
25.15 (0.99)
26.67 (1.05)
10.67 (0.42)
11.18 (0.44)
12
6.35 (0.25)
9.15 (0.36)
1.52 (0.06)
3.43 (0.135)
HIGH CURRENT
HIGH SPEED
HIGH POWER
SILICON NPN PLANAR
TRANSISTOR
FEATURES
m• Fast Turn-On Time – 1 s @ IC = 15A
• High Current Capability
3
(case)
3.84 (0.151)
4.09 (0.161)
7.92 (0.312)
12.70 (0.50)
TO–204AA (TO–3)
PIN 1 — Base
PIN 2 — Emitter
Case is Collector.
Applications
The BUX39 is an epitaxial silicon NPN planar
transistor that has high current and high power han-
dling capability and high switching speed.
This device is especially suitable for switching–control
amplifiers, power gates, switching regulators, power-
switching circuits converters, inverters and control cir-
cuits.Other recommended applications include
DC–RF amplifiers and power oscillators.
The BUX39 is in SEMELAB’s maintenance series
and is NOT recommended for new designs.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
120V
VCEX
VCER
Collector – Emitter Sustaining Voltage
Collector – Emitter Voltage
@ VBE = –1.5V
W@ RBE = 100
120V
110V
VCEO(sus) Collector – Emitter Sustaining Voltage
90V
VEBO
Emitter – Base Voltage
7V
IC Collector Current
30A
ICM Peak Collector Current
40A
IB Base Current
6A
Ptot Total Power Dissipation
120W
Derate above 25°C
0.68 W / °C
Tstg, Tj
TL
Maximum Junction and Storage Temperature Range
³Lead Temperature 1/32 inch (0.8 mm) for 10 sec. max.
–65 to 100°C
230°C
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Prelim. 3/94
SEME
LAB
BUX39
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
Collector - Emitter Sustaining
VCEO(sus)* Voltage
IC = 0.2A
L = 25mH
IB = 0
90
Emitter – Base
V(BR)EBO Breakdown Voltage
IC = 0
IE = 50mA
7
ICEO
Collector Cut-off Current
ICEX
Collector Cut-off Current
IEBO
VCE(sat)*
VBE(sat)*
Emitter Cut-off Current
Collector – Emitter
Saturation Voltage
Base – Emitter
Saturation Voltage
VCE = 70V
VCE = 120V
VCE = 120V
TC = 125°C
IC = 0
IC = 12A
IC = 20A
IC = 20A
VBE = –1.5V
VBE = –1.5V
VBE = –5V
IB = 1.2A
IB = 2.5A
IB = 2.5A
hFE*
DC Current Gain
Second Breakdown
IS/b Collector Current
fT Transition Frequency
tON Turn–On Time
ts Storage Time
tf Fall Time
IC = 12A
VCE = 4V
IC = 20A
VCE = 4V
VCE = 45V
t = 1s
VCE = 30V
t = 1s
IC = 1A
VCE = 15V
IC = 20A
VCC = 30V
IB = 2.5A
IC = 20A
VCC = 30V
IB1 = –IB2 = 2.5A
15
8
1
4
8
Typ.
0.7
1.25
2.1
0.8
0.55
0.15
Max. Unit
V
V
1 mA
1
mA
5
1 mA
1.2
V
1.6
2.5 V
45
—
A
MHz
1.5
ms
1
0.3
THERMAL CHARACTERISTICS
RqJC
Thermal Resistance Junction to Case
1.46 °C/W
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Prelim. 3/94
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BUX39 transistor
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