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BLUE ROCKET ELECTRONICS |
BCW66
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions
SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package.
特征 / Features
与 BCW68 互补。
Complementary to BCW68.
用途 / Applications
用于中功率放大。
Medium power amplifier applications.
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
3
2
1
PIN1:Emitter
PIN 2:Base PIN 3:Collector
放大及印章代码 / hFE Classifications & Marking
hFE Classifications
Symbol
hFE Range
F
100~250
G
160~400
Marking
HDAO
HDAY
H
250~630
HDAG
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BCW66
Rev.E Mar.-2016
DATA SHEET
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current(DC)
Peak Collector Current
Peak Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
VCBO
VCEO
VEBO
IC
ICM
IB
PC
Tj
Tstg
数值
Rating
75
45
5.0
800
1.0
100
330
150
-55~150
单位
Unit
V
V
V
mA
A
mA
mW
℃
℃
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector-Emitter Cut-off Current
Emitter Base Cut-Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Transition Frequency
Output Capacitance
Input Capacitance
Noise Figure
Turn-On Time
Turn-Off Time
符号
Symbol
测试条件
Test Conditions
VCBO IC=10μA
VCEO ICEO=10mA
VEBO IEBO=10μA
ICES VCB=45 V
IEBO VEB=4.0V
hFE(1) VCE=1.0V IC=100mA
hFE(2) VCE=1.0V IC=10mA
hFE(3) VCE=2.0V IC=500mA
VCE(sat)(1) IC=100mA IB=10mA
VCE(sat)(2) IC=500mA IB=50mA
VBE(sat)
fT
IC=500mA
VCE=10V
f=100MHz
IB=50mA
IC=20mA
Cobo VCB=10V f=1.0MHz
Cibo VEB=0.5V f=1.0MHz
NF
VCE=5.0V
Rg=1.0kΩ
IC=0.2mA
ton IC=10IB1=-10IB2=150mA
toff RL=150Ω
最小值 典型值 最大值 单位
Min Typ Max Unit
75 V
45 V
5.0 V
0.1 μA
0.1 μA
100 630
75
35
0.3 V
0.7 V
2.0 V
100 MHz
8.0 12 pF
80 pF
2.0 10 dB
0.1 μs
0.4 μs
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