BC337M 반도체 회로 부품 판매점
Silicon NPN transistor
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 FOSHAN BLUE ROCKET |
BC337M
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions
SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package.
特征 / Features
大电流,与 BC327M 互补。
High current, complementary pair with BC327M.
用途 / Applications
用于一般放大及开关线路。
General power amplifier and switching.
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
3
2
1
PIN1：Emitter
PIN 2：Base PIN 3：Collector
放大及印章代码 / hFE Classifications & Marking
hFE Classifications
Symbol
hFE Range
16
100～250
25
160～400
Marking
H6C1
H6C2
40
250～600
H6C4
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BC337M
Rev.E Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Emitter - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
VCBO
VCEO
VEBO
IC
IE
PC
Tj
Tstg
DATA SHEET
数值
Rating
50
45
5.0
800
-800
300
150
-55～150
单位
Unit
V
V
V
mA
mA
mW
℃
℃
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
Collector Cut-Off Current
DC Current Gain
Collector to Emitter Saturation
Voltage
Base to Emitter Voltage
Transition Frequency
Collector Output Capacitance
符号
Symbol
ICBO
hFE
VCE(sat)
VBE
fT
Cob
测试条件
Test Conditions
VCB=45V IE=0
VCE=1.0V IC=100mA
IC=500mA IB=50mA
VCE=1.0V
VCE=5.0V
f=100MHz
VCB=10V
IC=300mA
IC=10mA
f=1.0MHz
最小值
Min
100
典型值 最大值 单位
Typ Max Unit
0.1 μA
600
0.7 V
1.2 V
100 MHz
12 pF
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( foshan )
BC337M transistor
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
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IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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