2N6678 반도체 회로 부품 판매점
NPN SILICON POWER TRANSISTOR
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 Central Semiconductor |
2N6676
2N6677
2N6678
NPN SILICON
POWER TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6676 SERIES
types are NPN Silicon Power Transistors designed for
high voltage switching applications.
MARKING: FULL PART NUMBER
TO-3 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCEV
VCEO
VEBO
IC
ICM
IB
PD
TJ, Tstg
ΘJC
2N6676
450
300
2N6677
550
350
8.0
15
20
5.0
175
-65 to +200
1.0
2N6678
650
400
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICEV
VCE=Rated VCEV, VBE(off)=1.5V
ICEV
VCE=Rated VCEV, VBE(off)=1.5V, TC=100°C
IEBO
VEB=8.0V
BVCEO
IC=200mA (2N6676)
300
BVCEO
IC=200mA (2N6677)
350
BVCEO
IC=200mA (2N6678)
400
VCE(SAT) IC=15A, IB=3.0A
VBE(SAT) IC=15A, IB=3.0A
hFE VCE=3.0V, IC=15A
8.0
Cob VCB=10V, IE=0, f=1.0MHz
ft VCE=10V, IC=1.0A, f=5.0MHz
3.0
td
tr
ts
VCC=200V, IC=15A, IB1=IB2=3.0A
tp=20μs, Duty Cycle≤2.0%
VBB≈6.0V, RL=13.5Ω
tf
MAX
100
1.0
2.0
1.5
1.5
500
10
0.1
0.6
2.5
0.5
UNITS
V
V
V
A
A
A
W
°C
°C/W
UNITS
μA
mA
mA
V
V
V
V
V
pF
MHz
μs
μs
μs
μs
R0 (26-July 2010)
2N6676
2N6677
2N6678
NPN SILICON
POWER TRANSISTOR
TO-3 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Base
2) Emitter
Case) Collector
MARKING:
FULL PART NUMBER
w w w. c e n t r a l s e m i . c o m
R0 (26-July 2010)
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제조업체: Central Semiconductor
( central )
2N6678 transistor
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[ 2N6678.PDF ]
[ 2N6678 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
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