2N2907 반도체 회로 부품 판매점
PNP Switching Transistors
|
|
 MCC |
MCC
TM
Micro Commercial Components
omponents
20736 Marilla Street Chatsworth
!"#
$
% !"#
Features
• High current (max.600mA)
• Low voltage (max.60V)
• Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates
RoHS Compliant. See ordering information)
Maximum Ratings
Symbol
Rating
VCEO
Collector-Emitter Voltage
2N2907
2N2907A
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC Collector Current (DC)
ICM Peak Collector Current
IBM Peak Base Current
TJ Operating Junction Temperature
TSTG
Storage Temperature
Thermal Characteristics
Rating
40
60
60
5.0
600
800
200
-55 to +150
-55 to +150
Unit
V
V
V
mA
mA
mA
OC
OC
Symbol
Ptot
Rating
Total power Dissipation
TA≦25℃
TC≦25℃
Max
400
1.2
Unit
mW
W
RJC Thermal Resistance, Junction to Case
146 K/W
RJA
Thermal Resistance, Junction to Ambient
350
K/W
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
OFF CHARACTERISTICS
Collector cut-off current
(VCB=50Vdc, IE=0)
ICBO (VCB=50Vdc, IE=0,TA=150℃)
(VCB=50Vdc, IE=0)
(VCB=50Vdc, IE=0,TA=150℃)
IEBO
Emitter Cut-off current
(IC=0, VEB=5.0Vdc)
DC Current Gain
(IC=0.1mAdc, VCE=10Vdc)
hFE
(IC=1.0mAdc, VCE=10Vdc)
(IC=10mAdc, VCE=10Vdc)
(IC=150mAdc, VCE=10Vdc)*
(IC=500mAdc, VCE=10Vdc)*
DC Current Gain
(IC=0.1mAdc, VCE=10Vdc)
hFE
(IC=1.0mAdc, VCE=10Vdc)
(IC=10mAdc, VCE=10Vdc)
(IC=150mAdc, VCE=10Vdc)*
(IC=500mAdc, VCE=10Vdc)*
2N2907
2N2907A
2N2907
2N2907A
Min
---
---
---
---
---
35
50
75
100
30
75
100
100
100
50
Max Units
20 nAdc
20 uAdc
10 nAdc
10 uAdc
50 nAdc
300
300
Notes:1.High Temperature Solder Exemption Applied, see EU Directive Annex 7.
2N2907
2N2907A
PNP Switching
Transistors
TO-18
DIMENSIONS
INCHES
MM
DIM MIN MAX MIN MAX NOTE
A .209 .230 5.309 5.842 Φ
B .178 .195 4.521 4.953 Φ
C .170 .210 4.318 5.334
D .50 .75 12.7 19.05
E .100
2.54
ΦTYP
F .028 .048 7.112 1.219
G ----- .050 ----- 1.27
H .009 .031 0.229 0.787
J 44° 46° 44° 46°
K .036 .046 0.914 1.168
L .016 .021 0.406 0.533
Revision: A
www.mccsemi.com
1 of 3
2011/01/01
2N2907,2N2907A
Symbol
Parameter
ON CHARACTERISTICS*
VCE(sat)
VBE(sat)
Collector-Emitter Saturation Voltage*
(IC=150mAdc, IB=15mAdc)
(IC=500mAdc, IB=50mAdc)
Base-Emitter Saturation Voltage *
(IC=150mAdc, IB=15mAdc)
(IC=500mAdc, IB=50mAdc)
SMALL-SIGNAL CHARACTERISTICS
COB
fT
Output Capacitance
(VCB=10Vdc,IE=ie=0, f=1.0MHz)
Transistor Frequency*
(IC=50mAdc, VCE=20Vdc, f=100MHz)
SWITCHING CHARACTERISTICS
Td Delay Time
tr Rise Time
ts Storage Time
ICON=150mAdc,
IBON=15mAdc, IB(off)=15mAdc
tf Fall Time
* Pulse Test: tp≦300us, Duty Cycle≦2.0%
MCC
TM
Micro Commercial Components
Min Max Units
--- 400 mVdc
--- 1.6 Vdc
--- 1.3 Vdc
--- 2.6 Vdc
--- 8.0
200 ---
--- 15
--- 35
--- 250
--- 50
pF
MHz
ns
ns
ns
ns
Revision: A
www.mccsemi.com
2 of 3
2011/01/01
|
PDF 파일 내의 페이지 : 총 3 페이지
제조업체: MCC
( mcc )
2N2907 transistor
데이터시트 다운로드 :
[ 2N2907.PDF ]
[ 2N2907 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
관련 데이터시트
2N2903
NPN SILICON DUAL TRANSISTOR - Central Semiconductor Corp
2N2903
DUAL AMPLIFIER TRANSISTOR - Motorola Semiconductors
2N2903
NPN SILICO N DUAL TRANSISTOR - New Jersey Semiconductor
2N2903A
NPN SILICON DUAL TRANSISTOR - Central Semiconductor Corp
2N2903A
DUAL AMPLIFIER TRANSISTOR - Motorola Semiconductors
2N2903A
NPN SILICO N DUAL TRANSISTOR - New Jersey Semiconductor
2N2904
GENERAL PURPOSE PNP TRANSISTOR - Seme LAB
2N2904
PNP SILICON PLANAR TRANSISTORS - Siemens Semiconductor Group
2N2904
PNP SWITCHING SILICON TRANSISTOR - Microsemi Corporation