BSS74 반도체 회로 부품 판매점
HIGH VOLTAGE TRANSISTOR
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 Motorola Semiconductors |
T
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
@TaTotal Device Dissipation
= 25°C
Derate above 25°C
Total Device Dissipation @Tc = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol BSS BSS BSS
74 75 76
VCEO 200 250 300
VCBO 200 250 300
VEBO
5.0
ic 0.5
PD 0.5
2.86
pd
Tj, s tg
2.5
14.3
-65 to +200
Unit
Vdc
Vdc
Vdc
Adc
Watt
mW/°C
Watt
mW/°C
°c
Symbol
R»jc
Max
70
Unit
°C/W
BSS74
BSS75
BSS76
CASE 79, STYLE 1
TO-18 (TO-206AA)
HIGH VOLTAGE TRANSISTOR
PNP SILICON
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC = 10 mA, Ib = 0)
BSS74
BSS75
BSS76
V(BR)CEO
Collector-Base Breakdown Voltage
(IC = 100 uAdc, IE = 0)
BSS74
BSS75
BSS76
V(BR)CB0
Emitter-Base Breakdown Voltage
(l E = 100 uAdc, IC = 0)
BSS74
BSS75
BSS76
V(BR)EBO
Collector Cutoff Current
(VCB = 150 V. IE = 0)
(V C B = 200 V, El = 0)
(V C B = 250 V, IE = 0)
Collector-Emitter Cutoff Current
(V C E = 150 V, Bl = 0)
(V C E = 200 V, Ib = 0)
(V C E = 300 V, IB = 0)
BSS74
BSS75
BSS76
BSS74
BSS75
BSS76
Emitter-Cutoff Current
(V B E = 5 Vdc, cl = 0)
ON CHARACTERISTICS)!)
DC Current Gain
C(l = 0.1 mA, VCE = 1 V)
dC = 1 mA, VCE = 10 V)
(lC
=
10
mA,
VCE
=
10
v
>
(lC = 30 mA, VCE = 10 V)
C(I = 100 mA, VCE = 10 V)
BSS74
ALL
ALL
ALL
BSS76
Collector-Emitter Saturation Voltage
C(I = 10 mAdc, Ib = 1 mAdc)
(lC = 30 mAdc, Ib = 3 mAdc)
C(I = 50 mAdc, IB = 5 mAdc)
(lC = 100 mAdc, Ib = 20 mAdc)
ALL
ALL
ALL
BSS7(
Base-Emitter Saturation Voltage
(lC = 10 mAdc, Ib = 1 mAdc)
(lC = 30 mAdc, Ib = 3 mAdc)
(lC = 50 mAdc, Ib = 5 mAdc)
(lC = 100 mAdc, Ib = 10 mAdc)
ALL
ALL
ALL
BSS7f
' Pulse Test: Pulse Width < 300 us. Duty Cycle < 2%.
ICB0
ICEO
IEBO
hFE
VCE(sat)
VBE(sat)
Typ
Max
Unit
|
||
|
Vdc
200
250
300
Vdc
200
250
300
50
50
50
500
500
500
20 40
30 45
35 50
35 55 150
40
0.15
0.25
0.35
0.40
0.3
0.4
0.5
Vdc
0.7
0.8
0.85
0.9
0.8
0.9
1.0
4-237
1
BSS74, BSS75, BSS76
ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted.)
Characteristic
DYNAMIC CHARACTERISTICS
Symbol
||
Min
[
Typ
| Max ~f Unit
Current Gain Bandwidth product
(IC = 20 mAdc, Vqe = 20 Vdc, f = 20 MHz)
Output Capacitance
('E = 0. VCB = 20 Vdc, f = 1 MHz)
Input Capacitance
(IC = 0. VEB = 0-5 Vdc, f = 1 MHz)
Turn On Time
(lB1 = 10 mA, lc = 50 mAdc, Vfjc = 100 Vdc)
Turn Off Time
(lB2 = 1 mAdc, lc = 50 mAdc, Vqc = 1 00 Vdc)
Cob
Cib
toff
50 110 200
3.5
45
100
400
PF
PF
Fl GUR E 1 - D ccUl<REIS T GAIN
z
<
|f 200
z
| 100
" 50
-=
10
C
Tj = +1 25 X
v —""'"VC£ == 10
-55 0C
^*B-
- sv—
0.5 1.0
_
5.0
10
IC. COLLECTOR CURRENT (mA)
20
1
FIGURE 3 - "ON" VOLTAGES
'
11
1 ? _ . Tj = 25 f>C
10
08 ~~
VBEIsat) i" 1
===
h0.6 V BE{ on) <" V CE = 10V
1
r
]-
~r
04
Mn? v CEIsat)<" iC"B- iu
n1
1 11
20 3.0
5.0
10
/-/
^in
20 30
\
IC, COLLECTOR CURRENT (mA)
mFIGURE 2 - CAPACITANCES
02 0.5 1.0 2.0
5.0 10 20
50 100 200
Vr, REVERSE VOLTAGE (VOLTS)
FIGURE 4 - TEMPERATURE COEFFICIENTS
»v :for VCE(sat)
11
"c
is
/
/
25°t to 1 25°C
{/
S/
i°Ct o25°C
Vbe
-56 °Ct 12 5°
10
2.0 3.0
5.0 7.0 10
20 30
50 70 100
IC, COLLECTOR CURRENT (mA)
4-238
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BSS74 transistor
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