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PDF MUN5133T1 Data sheet ( Hoja de datos )
| Número de pieza | MUN5133T1 | |
| Descripción | Bias Resistor Transistor | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor with
Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single device and its
external resistor bias network. The BRT (Bias Resistor Transistor) contains a single
transistor with a monolithic bias network consisting of two resistors; a series base
resistor and a base–emitter resistor. The BRT eliminates these individual components
by integrating them into a single device. The use of a BRT can reduce both system
cost and board space. The device is housed in the SC–70/SOT–323 package which
is designed for low power surface mount applications.
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• The SC–70/SOT–323 package can be soldered using
wave or reflow. The modified gull–winged leads absorb
thermal stress during soldering eliminating the possibility
of damage to the die.
• Available in 8 mm embossed tape and reel
Use the Device Number to order the 7 inch/3000 unit reel.
Replace “T1” with “T3” in the Device Number to order
the 13 inch/10,000 unit reel.
R1
PIN1 R2
BASE
(INPUT)
PIN3
COLLECTOR
(OUTPUT)
PIN2
EMITTER
(GROUND)
MUN5111T1
SERIES
Motorola Preferred Devices
PNP SILICON
BIAS RESISTOR
TRANSISTOR
3
1
2
CASE 419–02, STYLE 3
SC–70/SOT–323
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Collector–Base Voltage
Collector–Emitter Voltage
Collector Current
Total Power Dissipation @ TA = 25°C(1)
Derate above 25°C
VCBO
VCEO
IC
PD
50
50
100
*150
1.2
THERMAL CHARACTERISTICS
Thermal Resistance — Junction–to–Ambient (surface mounted)
Operating and Storage Temperature Range
Maximum Temperature for Soldering Purposes,
Time in Solder Bath
RθJA
TJ, Tstg
TL
833
– 65 to +150
260
10
DEVICE MARKING AND RESISTOR VALUES
Device
Marking
R1 (K)
MUN5111T1
MUN5112T1
MUN5113T1
MUN5114T1
MUN5115T1(2)
MUN5116T1(2)
MUN5130T1(2)
MUN5131T1(2)
MUN5132T1(2)
MUN5133T1(2)
MUN5134T1(2)
6A
6B
6C
6D
6E
6F
6G
6H
6J
6K
6L
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
1. Device mounted on a FR–4 glass epoxy printed circuit board using the minimum recommended footprint.
2. New devices. Updated curves to follow in subsequent data sheets.
Preferred devices are Motorola recommended choices for future use and best overall value.
Unit
Vdc
Vdc
mAdc
mW
mW/°C
°C/W
°C
°C
Sec
R2 (K)
10
22
47
47
∞
∞
1.0
2.2
4.7
47
47
REV 2
2–754
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1 page  
MUN5111T1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5112T1
10
IC/IB = 10
1000
VCE = 10 V
1 25°C
TA = –25°C
100
75°C
0.1
TA = 75°C
25°C
–25°C
0.01
0
20 40
IC, COLLECTOR CURRENT (mA)
Figure 7. VCE(sat) versus IC
50
10
1
10
IC, COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
100
4 100
f = 1 MHz
75°C 25°C
3
lE = 0 V
TA = 25°C
10
TA = –25°C
1
2
0.1
1
0
0 10 20 30 40 50
VR, REVERSE BIAS VOLTAGE (VOLTS)
0.01
0.001 0 1
VO = 5 V
2 3 4 5 6 7 8 9 10
Vin, INPUT VOLTAGE (VOLTS)
Figure 9. Output Capacitance
Figure 10. Output Current versus Input Voltage
100
VO = 0.2 V
TA = –25°C
10 25°C
75°C
1
0.1
0
10 20 30 40
IC, COLLECTOR CURRENT (mA)
50
Figure 11. Input Voltage versus Output Current
2–758
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet MUN5133T1.PDF ] | |
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