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PDF MSB710-QT1 Data sheet ( Hoja de datos )
| Número de pieza | MSB710-QT1 | |
| Descripción | PNP General Purpose Amplifier Transistor Surface Mount | |
| Fabricantes | Motorola Semiconductors | |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MSB710–QT1/D
PNP General Purpose Amplifier
Transistors Surface Mount
COLLECTOR
3
MAXIMUM RATINGS (TA = 25°C)
Rating
Collector–Base Voltage
Collector–Emitter Voltage
Emitter–Base Voltage
Collector Current — Continuous
Collector Current — Peak
THERMAL CHARACTERISTICS
Characteristic
Power Dissipation
Junction Temperature
Storage Temperature
DEVICE MARKING
Marking Symbol
CQX
2
BASE
1
EMITTER
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC
IC(P)
Symbol
PD
TJ
Tstg
CRX
MSB710–QT1
MSB710–RT1
The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month
in which the part was manufactured.
MSB710-QT1
MSB710-RT1*
*Motorola Preferred Device
2
1
3
CASE 318D–03, STYLE 1
SC–59
Value
– 60
– 50
– 7.0
– 500
–1.0
Max
200
150
– 55 ~ +150
Unit
Vdc
Vdc
Vdc
mAdc
Adc
Unit
mW
°C
°C
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1996
1
1 page  
PACKAGE DIMENSIONS
MSB710-QT1 MSB710-RT1
A
L
3
S
21
B
D
G
C
H
J
K
CASE 318D–03
ISSUE E
SC–59
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
MILLIMETERS
INCHES
DIM MIN MAX MIN MAX
A 2.70 3.10 0.1063 0.1220
B 1.30 1.70 0.0512 0.0669
C 1.00 1.30 0.0394 0.0511
D 0.35 0.50 0.0138 0.0196
G 1.70 2.10 0.0670 0.0826
H 0.013 0.100 0.0005 0.0040
J 0.10 0.26 0.0040 0.0102
K 0.20 0.60 0.0079 0.0236
L 1.25 1.65 0.0493 0.0649
S 2.50 3.00 0.0985 0.1181
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MSB710-QT1.PDF ] | |
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