TIP125 반도체 회로 부품 판매점
PNP Transistor
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 JCET |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L Plastic-Encapsulate Transistors
TIP120,121,122 Darlington TRANSISTOR (NPN)
TIP125,126,127 Darlington TRANSISTOR (PNP)
FEATURES
Medium Power Complementary Silicon Transistors
TO-220-3L
1.BASE
2.COLLECTOR
3.EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
VCBO
VCEO
VEBO
IC
PC
RθJA
RθJc
TJ
Tstg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance Junction to Ambient
Thermal Resistance Junction to Case
Junction Temperature
Storage Temperature
TIP120
TIP125
60
60
TIP121
TIP126
80
80
5
5
2
62.5
1.92
150
-55to+150
TIP122
TIP127
100
100
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector cut-off current
Collector cut-off current
TIP120,TIP125
TIP121,TIP126
TIP122,TIP127
TIP120,TIP125
TIP121,TIP126
TIP122,TIP127
TIP120,TIP125
TIP121,TIP126
TIP122,TIP127
TIP120,TIP125
TIP121,TIP126
TIP122,TIP127
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Output Capacitance
TIP125,TIP126,TIP127
TIP120,TIP121,TIP122
Symbol
Test conditions
V(BR)CBO
IC= 1mA,IE=0
VCEO(SUS) IC= 30mA,IB=0
ICBO
ICEO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE
Cob
VCB= 60 V, IE=0
VCB= 80 V, IE=0
VCB= 100V, IE=0
VCE=30 V, IB=0
VCE=40 V, IB=0
VCE=50 V, IB=0
VEB=5 V, IC=0
VCE= 3V, IC=0.5A
VCE= 3V, IC=3 A
IC=3A,IB=12mA
IC=5 A,IB=20mA
VCE=3V, IC=3 A
VCB=10V, IE=0,f=0.1MHz
Min
60
80
100
60
80
100
1000
1000
www.cj-elec.com
1
Unit
V
V
V
A
W
℃/W
℃/W
℃
℃
Max Unit
V
V
0.2 mA
0.5 mA
2 mA
2
4
V
2.5 V
300
200
pF
C,Oct,2014
Typical Characteristics
Typical Characteristics
TIP127
Static Characteristic
-6
COMMON
EMITTER
-5 -1.0mA
Ta=25℃
-0.9mA
-4 -0.8mA
-0.7mA
-0.6mA
-3
-0.5mA
-2 -0.4mA
-1 -0.3mA
IB=-0.2mA
-0
-0 -1 -2 -3 -4 -5 -6 -7 -8
COLLECTOR-EMITTER VOLTAGE VCE (V)
-2.0
β=250
-1.8
-1.6
-1.4
-1.2
-1.0
-0.8
-0.6
-0.4
-0.2
-0.0
-1
-5000
V —— I
BEsat
C
Ta=25℃
Ta=100℃
-10 -100
COLLECTOR CURRENT IC
IC ——
VBE
-1000
(mA)
-5000
-1000
-100
Ta=100 oC
-10
-1
-0.1
-0.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
Ta=25℃
VCE=-3V
-0.5 -1.0
BASE-EMITTER VOLTAGE
P —— T
ca
-1.5
VBE(V)
-2.0
25 50 75 100 125
AMBIENT TEMPERATURE Ta (℃)
150
10000
VCE= -3V
1000
100
h —— I
FE C
Ta=100 oC
Ta=25 oC
10
-1
-1200
-1000
β=250
-800
-600
-400
-200
-0
-1
250
200
150
100
-10
-100
-1000
COLLECTOR CURRENT IC (mA)
V —— I
CEsat
C
-5000
Ta=25℃
Ta=100℃
-10
-100
-1000
COLLECTOR CURRENT IC (mA)
-5000
C / C ——
ob ib
V /V
CB EB
f=1MHz
IE=0 / IC=0
Ta=25 oC
Cib
Cob
50
0
-0.1 -1 -10 -20
REVERSE VOLTAGE V (V)
www.cj-elec.com
2
C,Oct,2014
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TIP125 transistor
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