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DJT4031N 반도체 회로 부품 판매점

NPN SURFACE MOUNT TRANSISTOR



Diodes 로고
Diodes
DJT4031N 데이터시트, 핀배열, 회로
DJT4031N
LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR
Features
Mechanical Data
Ideally Suited for Automated Assembly Processes
Complementary PNP Type Available (DJT4030P)
Low Collector-Emitter Saturation Voltage
Ideal for Medium Power Switching or Amplification Applications
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Case: SOT-223
Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.115 grams (approximate)
COLLECTOR
2,4
3E
Top View
1
BASE
3
EMITTER
Device Schematic
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Symbol
VCBO
VCEO
VEBO
ICM
IC
IB
C4 2C
1B
Pin Out Configuration
Value
40
40
6
5
3
1
Unit
V
V
V
A
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 3) @ TA = 25°C
Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C
Power Dissipation (Note 4) @ TA = 25°C
Thermal Resistance, Junction to Ambient Air (Note 4) @ TA = 25°C
Operating and Storage Temperature Range
Symbol
PD
RθJA
PD
RθJA
TJ, TSTG
Value
1.2
104
2
62.5
-55 to +150
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
4. Device mounted on FR-4 PCB with 1 inch2 copper pad layout.
Unit
W
°C/W
W
°C/W
°C
DJT4031N
Document number: DS31603 Rev. 2 - 2
1 of 5
www.diodes.com
March 2009
© Diodes Incorporated


DJT4031N 데이터시트, 핀배열, 회로
DJT4031N
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
Equivalent On-Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn-on Voltage
SMALL SIGNAL CHARACTERISTICS
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(SAT)
RCE(SAT)
VBE(SAT)
VBE(ON)
Min
40
40
6
220
200
100
Transition Frequency
fT
Output Capacitance
Input Capacitance
SWITCHING CHARACTERISTICS
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
Cobo
CIbo
ton
td
tr
toff
ts
tf
Notes: 4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle 2%.
Typ
105
27
180
45
14
31
276
244
32
Max
100
50
100
500
100
150
300
100
1.0
1.0
Unit Test Conditions
V IC = 100μA
V IC = 10mA
V IE = 50μA
nA VCB = 40V, IE = 0
μA VCB = 40V, IE = 0, TA = 150°C
nA VEB = 6V, IC = 0
VCE = 1V, IC = 0.5A
VCE = 1V, IC = 1A
VCE = 1V, IC = 3A
IC = 0.5A, IB = 5mA
mV IC = 1A, IB = 10mA
IC = 3A, IB = 0.3A
mΩ IE = 3A, IB = 0.3A
V IC = 1A, IB = 0.1A
V VCE = 2V, IC = 1A
MHz
pF
pF
VCE = 10V, IC = 100mA,
f = 100MHz
VCB = 10V, f = 1MHz
VCB = 5V, f = 1MHz
ns
ns VCC = 10V, IC = 2A,
ns IB1 = 200mA
ns
ns VCC = 10V, IC = 2A,
ns IB1 = IB2 = 200mA
2.0
1.6
1.2 (Note 4)
0.8
(Note 3)
0.4
10
1
0.10
Pw = 1ms
DC Pw = 100ms
Pw = 10ms
0
0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs. Ambient Temperature
0.01
0.1 1
10 100
VCE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage (Note 3)
DJT4031N
Document number: DS31603 Rev. 2 - 2
2 of 5
www.diodes.com
March 2009
© Diodes Incorporated




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