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PDF BS2100F Data sheet ( Hoja de datos )
| Número de pieza | BS2100F | |
| Descripción | 600V High voltage High & Low-side / Gate Driver | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BS2100F (archivo pdf) en la parte inferior de esta página. Total 19 Páginas | ||
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600V High voltage
High & Low-side, Gate Driver
BS2100F
General Description
The BS2100F is a monolithic high and low side gate drive
IC, which can drive high speed power MOSFET and IGBT
driver with bootstrap operation.
The floating channel can be used to driven an N-channel
power MOSFET or IGBT in the high side configuration
which operates up to 600V.
The logic inputs can be used 3.3V and 5.0V.
The Under Voltage Lockout (UVLO) circuit prevents
malfunction when VCC and VBS are lower than the
specified threshold voltage.
Features
Floating Channels for Bootstrap Operation to +600V
Gate drive supply range from 10V to 18V
Built-in Under Voltage Lockout for Both Channels
3.3V and 5.0V Input Logic Compatible
Matched Propagation Delay for Both Channels
Output in phase with input
Applications
MOSFET and IGBT high side driver applications
Key Specifications
High-side floating supply voltage:
600V
Output voltage range:
10V to 18V
Min Output Current Io+/Io-:
60mA/130mA
Turn-on/off time:
220ns(Typ)
Dead time:
160ns(Typ)
Delay Matching:
50ns(Max)
Offset supply leakage current:
50µA (Max)
Operating temperature range: -40°C to +125°C
Package
SOP-8
5.00mm x 6.20mm x 1.50mm
Typical Application Circuits
VCC
LIN
HIN
LIN
HIN
VCC
COM
VB
HO
VS
LO
Up to 600V
TTOO
LLOORADD
Figure 1. Typical Application Circuit
〇Product structure : Silicon monolithic integrated circuit
.www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
TSZ22111・14・001
〇This product has no designed protection against radioactive rays
1/16
TSZ02201-0Q3Q0BZ00260-1-2
2.FEB.2015 Rev.002
1 page  
BS2100F
Typical Performance Curves
(Unless otherwise specified: Ta=25°C, VCC=15V,VBS=15V,VS=COM,CL=1000pF)
12
11
10
VCCUV+
9
8
VCCUV-
7
6
-40 -20 0 20 40 60 80 100 120 140
AMBIENT TEMPERATURE [°C]
Figure 4. VCC UVLO - Ta
12
11
10 VBSUV+
9
8
VBSUV-
7
6
-40 -20 0 20 40 60 80 100 120 140
AMBIENT TEMPERATURE [°C]
Figure 5. VBS UVLO - Ta
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
0
Ta=150°C
100 200 300 400 500 600 700
VS [V]
Figure 6. Offset Supply Leakage Current - VS
(VB=VS)
1.0
0.8
0.6
0.4
0.2
0.0
-40
0 40 80 120 160
AMBIENT TEMPERATURE [°C]
Figure 7. Offset Supply Leakage Current – Ta
(VB=VS=600V)
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
5/16
TSZ02201-0Q3Q0BZ00260-1-2
2.FEB.2015 Rev.002
5 Page 
BS2100F
Power Dissipation
It is shown below reducing characteristics of power dissipation to mount 70mm×70mm×1.6mmt, 1layer PCB.
Junction temperature must be designed not to exceed 150°C
1.5
1
0.67W
0.5
5.4mW/℃
0
0
25 50 75 100 125
Ambient Tempreature:Ta[℃]
150
Figure 26. Power Dissipation(70mm×70mm×1.6mmt 1layer PCB)
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
11/16
TSZ02201-0Q3Q0BZ00260-1-2
2.FEB.2015 Rev.002
11 Page | ||
| Páginas | Total 19 Páginas | |
| PDF Descargar | [ Datasheet BS2100F.PDF ] | |
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