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PDF MJD350 Data sheet ( Hoja de datos )
| Número de pieza | MJD350 | |
| Descripción | Silicon PNP Power Transistor | |
| Fabricantes | Inchange Semiconductor | |
| Logotipo |  |
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isc Silicon PNP Power Transistor
INCHANGE Semiconductor
MJD350
DESCRIPTION
·Collector–Emitter Sustaining Voltage-
: VCEO(SUS) = -300 V(Min)
·Low Collector Saturation Voltage-
: VCE(sat) = -1.0V(Max.)@ IC= -50mA
·DPAK for Surface Mount Applications
·Complement to Type MJD340
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
·Designed for line operated audio output amplifier,
switchmode power supply drivers and other switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-300
V
VCEO
Collector-Emitter Voltage
-300
V
VEBO
Emitter-Base Voltage
-3 V
IC Collector Current-Continuous
ICM Collector Current-Peak
Collector Power Dissipation
TC=25℃
PC
Collector Power Dissipation
Ta=25℃
Ti Junction Temperature
-0.5
-0.75
15
1.56
150
A
A
W
℃
Tstg Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBO
L
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
8.33 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 80 ℃/W
isc Website：www.iscsemi.com
1 isc & iscsemi is registered trademark
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| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MJD350.PDF ] | |
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